Tunable external-cavity semiconductor laser

A semiconductor and laser technology, applied in the field of tunable external cavity semiconductor lasers, can solve the problem that the output wavelength is not linearly tuned or changed, etc.

Active Publication Date: 2012-11-14
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The current mainstream Littrow structure and Littman-Metcalf structure are both based on gratings, but they all have some de

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  • Tunable external-cavity semiconductor laser
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  • Tunable external-cavity semiconductor laser

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Embodiment Construction

[0020] In order to make the objectives, features, and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0021] figure 1 It is a schematic diagram of the structure of a tunable external cavity semiconductor laser in an embodiment. The tunable external cavity semiconductor laser 100 includes a semiconductor optical amplifier 10 arranged in sequence along the laser emitting optical path and a collimator arranged in sequence on the semiconductor optical amplifier 10 emitting laser optical path. A straight lens 20, a Fabry-Perot filter 30 rotatable around a rotation axis 32, a first total reflection mirror 40, a partial reflection mirror 50, and a second total reflection mirror 60.

[0022] The laser light emitted by the semiconductor optical amplifier 10 first passes through the collimator lens 20 and the Fabry-Perot filter 30, and then is...

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Abstract

The invention relates to a tunable external-cavity semiconductor laser, comprising a semiconductor light amplifier, and the following components orderly arranged on a light path of the semiconductor light amplifier emitting laser: a collimating lens, a rotatable Fabry-Perot light filter, a first perfectly reflecting mirror, a partially reflecting mirror and a second perfectly reflecting mirror; and the partially reflecting mirror is perpendicular to the light path of the laser emitted via the first perfectly reflecting mirror. The tunable external-cavity semiconductor laser further comprises an actuator fixedly connected with the partially reflecting mirror, wherein the actuator comprises a contact plane parallel to the partially reflecting mirror; one end of the Fabry-Perot light filter is lapped on the contact plane; and the actuator moves in the direction of the normal line of the partially reflecting mirror so as to change the included angle between the Fabry-Perot light filter and the light path of the laser. The tunable external-cavity semiconductor laser can be tuned without influence on the light path; the direction of output laser beam can not be changed along with the tuning of the wavelength; and continuous tuning of the wavelength can be realized.

Description

【Technical Field】 [0001] The invention relates to a semiconductor laser, in particular to a tunable external cavity semiconductor laser. 【Background technique】 [0002] In 1964, the world's first external cavity semiconductor laser experiment was verified by Crowe and Craig. In 1981, Fleming and Mooradian published the first article describing in detail the characteristics of external cavity tunable semiconductor lasers. Since then, research on external cavity semiconductor lasers has become active around the world. Nowadays, the research hotspot of external cavity semiconductor lasers has shifted to large-scale continuous tuning, frequency stabilization and expanded applications. Its products are widely used in frequency division multiplexing and coherent optical communication systems. [0003] At present, external cavity tunable semiconductor lasers have developed a variety of structures. Although they are different, their design principles are the same, that is, inserting a lig...

Claims

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Application Information

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IPC IPC(8): H01S5/14H01S5/06
Inventor 肖啸于峰崎
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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