Method for measuring crystal wire of silicon rod of single crystal furnace in non-contact mode

Abstract

The invention discloses a method for measuring a crystal wire of silicon rod of a single crystal furnace in a non-contact mode, which comprises the following operations of carrying out real-time shooting on a growing silicon single crystal rod and analyzing an image. The measurement is carried out by adopting the following steps of: S1, determining a start scanning point on the image; S2, determining a feature pixel value of the crystal wire on the image; S3, determining end points on the image; S4, beginning from the points, scanning the image line by line by adopting a surface scanning method from right to left, and in case of a light ring, returning to the next line to scan; S5, after scanning a feature pixel of the crystal wire, recording the position of the rightmost pixel point; S6, by using the position of the rightmost pixel point as the highest point, calculating the crystal wire plane height x from the light ring to the highest point; and S7, according to x, sending a measurement result to a control mechanism. The measurement method disclosed by the invention can be used for detecting whether the crystal wire exists when the silicon rod grows in the high temperature and negative pressure environment; an experienced single crystal worker does not need to participate in the whole measurement process; the labor intensity is reduced; and the human cost is reduced.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon, in particular to a method for measuring non-contact silicon rod crystal lines in a single crystal furnace. Background technique [0002] In the manufacture of Czochralski single crystal, the raw material polysilicon crystal block is put into a quartz crucible, heated and melted in a single crystal furnace, and the seed crystal is inserted into the liquid surface to wait for the crystal line to appear and start to grow with equal diameter. In this process, there will be a very bright aperture on the solid-liquid interface between solid silicon and liquid silicon, and whether the ingot is monocrystalline silicon or polycrystalline silicon is judged by whether the crystal line on the aperture exists, as shown in Figure 1. , Figure 1a for polysilicon rods, Figure 1b For monocrystalline silicon rods. Because this process is always carried out in a high temperature and negative press...

AI Technical Summary

Problems solved by technology

In the whole production process, whether the crystal line exists is observed by experienced workers with naked eyes, the labor intensity is relatively high, and the labor cost is relatively high

Images