Modulable focus ring and method for adjusting plasma processor by using focus ring

Abstract

The invention discloses a modulable focus ring, which has an annular structure. The modulable focus ring is sleeved on the outer side wall of a wafer in an encircling manner; the focus ring and the wafer are arranged on the top of a base; the focus ring is also connected with a temperature adjustment device; an impedance adjustment material is doped in the focus ring; and impedance of the impedance adjustment material is changed along with the change of temperature. The focus ring is connected with the temperature adjustment device, and the conductor or non-conductor impedance adjustment material is doped in the focus ring, so that the temperature adjustment device is used for adjusting the temperature of the focus ring, and due to a characteristic of the impedance adjustment material, the impedance of the impedance adjustment material is changed along with the temperature, the impedance of the focus ring is changed along with the temperature; and the density distribution of plasmas at the edge of the wafer and on the focus ring is adjusted by adjusting the impedance of the focus ring, so that the density distribution uniformity of the plasmas on the surface of the wafer is realized, and the quality of a wafer etch process is improved.

Description

technical field [0001] The invention relates to a focus ring and a plasma processor adjustment method for wafer processing in the semiconductor field, in particular to an adjustable focus ring and a method for adjusting a plasma processor by using the focus ring. Background technique [0002] At present, in the production process of wafer 1 (wafer), it is necessary to use plasma 5 to etch the wafer, such as figure 1 As shown, when the wafer 1 is subjected to the etching process, the wafer 1 is fixedly supported on the base 2, and a focus ring 3 (focus ring) is set around the side of the wafer 1. During etching, the reactive gas used for etching the wafer 1 is distributed above the wafer 1 . The susceptor 2 emits electromagnetic waves to convert the particles in the reaction gas into plasma 5, and the plasma 5 etches the wafer 1 through the electric field. The focus ring 3 is made of quartz or silicon, and is sheathed on the outer ring of the wafer 1 to increase the surface...

AI Technical Summary

Problems solved by technology

Even if a focus ring is added to adjust the distribution of the high-frequency electric field, and then adjust the plasma concentration distribution, it cannot be optimized, because a plasma processing chamber usually uses different processes to process different wafers, and is specially designed for a processing process. Focus rings are not necessarily suitable for other machining processes

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