Double data rate (DDR) signal wiring encapsulation substrate and DDR signal wiring encapsulation method

Abstract

The invention provides a double data rate (DDR) signal wiring encapsulation substrate and a DDR signal wiring encapsulation method. A plurality of DDR storage control modules are symmetrically arranged on a chip. A plurality of storage control signal pins corresponding to the DDR storage control module are symmetrically arranged in the area outside the chip. A plurality of DDR signal wires which are symmetrically distributed are used for respectively and correspondently joining one of the DDR storage control modules to one of the storage control signal pins. The DDR signal wiring encapsulation substrate comprises a ground plane layer, a first medium layer, a DDR signal layer, a second medium layer and a DDR interface power supply plane layer; and the DDR interface power supply plane layer and the ground plane layer are simultaneously selected as a reference plane layer of a DDR signal. The DDR storage control modules are respectively and correspondently connected to the storage control signal pins through a plurality of DDR signal holes which are symmetrically distributed. A plurality of ground holes are correspondently and symmetrically distributed referring to the positions of the DDR signal holes.

Description

technical field [0001] The invention relates to semiconductor packaging technology, more specifically, the invention relates to a DDR signal wiring packaging substrate and a DDR signal wiring packaging method. Background technique [0002] Almost every electronic device, from smartphones to servers, uses some form of RAM (Random Access Memory) storage. Due to the relatively low cost per bit of SDRAM (Synchronous Dynamic Random Access Memory), it provides a good combination of speed and storage. Therefore, SDRAM remains the mainstream memory technology for most computers and computer-based products. [0003] DDR (Double Data Rate) is a double data rate SDRAM memory, which has become the choice of memory technology today. DDR technology continues to evolve, increasing speed and capacity while reducing cost, power, and the physical size of storage devices. [0004] DDR is also called DDR SDRAM (Double Rate Synchronous Dynamic Random Access Memory), which is simply called DDR...

AI Technical Summary

Problems solved by technology

[0006] However, impedance design can only guarantee the impedance characteristics of the signal

DDR high-speed signal transmission rate is high, and the current turnover rate is fast. If there is a large inductance on the current return path of DDR high-speed signal, significant inductive noise will be generated, which will directly affect the signal integrity of DDR high-speed signal

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