The invention discloses an LCP high-frequency substrate having the high-Dk and low-Df characteristic. The LCP high-frequency substrate comprises at least one copper foil layer, at least one high-dielectric LCP core layer and at least one high-dielectric glue layer, wherein the high-dielectric LCP core layer is arranged between the copper foil layer and the high dielectric layer, the high dielectric LCP core layer is a core layer with a Dk value being 6-100 and a Df value being 0.002-0.010, the high dielectric glue layer is a glue layer with a Dk value being 6-100 and a Df value being 0.002-0.010, the thickness of the copper layer is 1-35 micrometers, the thickness of the high dielectric LCP core layer is 12-100 micrometers, and the thickness of the high dielectric glue layer is 12-100 micrometers. The high dielectric LCP core layer and the high dielectric glue layer both have the high-Dk and low-Df characteristics, thus, the fabricated LCP high-frequency substrate has excellent high-speed transmission, low loss, high-Dk and low-Df performance, low roughness, the ultralow water absorption rate, low elastic force suitable for high-density assembly, favorable UV laser drilling capability and the excellent mechanical property.