Forming method for variable resistance non-volatile memory element and variable resistance non-volatile memory device

Abstract

Disclosed is a forming method for a variable resistance non-volatile memory element which provides lower forming voltage than conventional methods and whereby variation in forming voltage between individual variable resistance elements can be avoided. The forming method initializes a variable resistance element (100) and includes a step (S24) that determines whether or not a 1T1R memory cell current is larger than a reference current; a step (22) that, when the current is determined to be larger (i.e., "No" in S24), applies a positive voltage pulse for forming whereby the pulse width (Tp (n)) is stepped up; and a step (S23) that applies a negative voltage pulse with a pulse width (Tn) at or below the pulse width Tp (n). The step S24 and the voltage application steps S22 and S23 are repeated until the forming has been completed.

Description

technical field [0001] The present invention relates to a molding (initialization) method for stably performing resistance change in a variable resistance nonvolatile memory element, and a variable resistance nonvolatile memory device having such a function, wherein the variable resistance nonvolatile memory element The volatile memory element reversibly changes its resistance value based on an electrical signal. Background technique [0002] In recent years, variable resistance nonvolatile memory devices (hereinafter also simply referred to as "Non-volatile memory device") research and development. The variable resistance element refers to an element that has a property of reversibly changing a resistance value according to an electric signal, and can store data corresponding to the resistance value in a non-volatile manner. [0003] As a nonvolatile memory device using a variable resistance element, it is generally known that a MOS transistor and a variable resistance el...

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Problems solved by technology

[0039] However, in the above-mentioned conventional variable resistance semiconductor memory device, there is a technical problem in that the shaping voltage varies for each variable resistance element constituting the memory cell array, or that in order to transition to the state where the resistance change starts, the Initially, the shaping voltage applied to the variable resistance element increases

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