Method for shaping resistance variable nonvolatile memory element and resistance variable nonvolatile memory device
A non-volatile storage and resistance-variable technology, which is applied in the field of shaping of resistance-variable non-volatile memory elements and resistance-variable non-volatile memory devices, and can solve the problem of increasing the shaping voltage of resistance-changing elements and shaping voltage Deviation and other issues
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[0117] First, for Figure 29 The shown 1T1R type memory cell composed of a variable resistance element shows molding characteristics for the case where Pt (platinum) is used in the upper electrode 100c and the case where Ir (iridium) is used for the upper electrode 100c, And explain its technical problems, wherein the variable resistance element is composed of the first transition metal oxide layer 100b-1 (here, TaO x , 0y , x
[0118] Here, in the sample used in the experiment, the area of the variable resistance layer 100b is 0.25 μm 2 (=0.5μm×0.5μm), having a first transition metal oxide layer 100b-1 (here, TaO x : X=1.54, film thickness: 44.5nm), and the second transition metal oxide layer 100b-2 (here, TaO y : y=2.47, film thickness: 5.5 nm). The NMOS transistor serving as a switching element has a gate width W: 0.44 μm, a gate length L: 0.18 μm, and a gate insulating film thickness Tox: 3.5 nm.
[0119] The second transition metal oxide layer 100b-2 (h...
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