Supercharge Your Innovation With Domain-Expert AI Agents!

Method for eliminating internal stress of nanodevice

A technology of nano-devices and internal stress, which is applied in the direction of nanotechnology, nanotechnology, nanostructure manufacturing, etc., and can solve the problem of unstable working conditions of stress distribution component integration systems

Inactive Publication Date: 2012-12-05
TIANJIN UNIV
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the same micro-components are integrated on a chip, and if the stress of each component unit on the chip surface is different during the preparation process, the working condition of the component integration system will be unstable due to the uneven stress distribution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] Traditional metal processing and metallurgical methods for removing internal stress of materials and components include: vibration aging stress relief; heating stress relief; long-term natural placement. Compared with the traditional metal processing industry technology, the stress distribution of micro-nano-scale highly integrated components cannot adopt the vibration method (precise components are not easily affected by large vibration shocks) and the long-term placement method (severely affects the production schedule). Therefore, the thermal annealing process in the macroscopic heat treatment method can be properly adjusted and introduced into the highly integrated micron and nanometer component chips, which will artificially adjust the thermal stress distribution of the system to achieve artificial integration of components. Secondary performance adjustment allows highly integrated components to work in harmony under the same working conditions.

[0010] Components...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical fields of assembling and processing of electronic components and relates to a method for eliminating the internal stress of a nanodevice. The method comprises the following steps: heating the nanodevice in heat treatment equipment to a certain temperature between 100 and 500 DEG C at the speed of 2 to 8 DEG C / min; preserving heat for a period of time; slowly cooling to room temperature along with the environment of the heat treatment equipment; and taking out the nanodevice. The method has the advantages of simple process, obvious effect and low cost.

Description

Technical field [0001] The invention belongs to the technical field of assembly and processing of electronic components, and relates to a method for eliminating internal stress of nanometer devices. Background technique [0002] Stress is a key index to characterize the quality of microelectronic thin films, and has an extremely important impact on the reliability, performance and process yield of devices. With the upsurge of nano-devices such as quantum dots and quantum wires, the research on the stress distribution of nano-devices has attracted the attention of scientific researchers and engineering circles. [0003] With the improvement of device integration and the application of new technology, the influence of stress on devices is increasing. In recent years, the role of material stress has become an important field of device reliability physics research in the world, and there have been reports of stress-induced device failure in China. It is urgent to carry out res...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 邹强秦月辰刘文涛朱哲傅星马建国薛涛王慧帕提曼·托乎提
Owner TIANJIN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com