Method for growth of epitaxial layer of light emitting diode chip
A technology of light-emitting diodes and a growth method, which is applied in the field of epitaxial layer growth of light-emitting diode chips, can solve problems such as reducing the quality of light-emitting diode chips and affecting the internal quantum efficiency of light-emitting diode chips, so as to improve crystal quality and internal quantum efficiency, increase lateral Growth effect, effect of improving luminous efficiency
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[0024] Example 1
[0025] The embodiment of the present invention provides a method for growing an epitaxial layer of a light emitting diode chip, the method including:
[0026] Using the MOCVD method to sequentially grow u-type GaN layer 2, n-type layer 3, quantum well active region layer 4, and p-type layer 5 on substrate 1, such as figure 2 As shown, the growth pressure of the quantum active region layer 4 is 600 to 750 torr.
[0027] In specific implementation, the method can be implemented through the following steps:
[0028] Step 101: Place the crystal-oriented sapphire substrate on a graphite plate and send it into the reaction chamber, and heat it to 1060° C. to heat the sapphire substrate for 5 minutes.
[0029] Step 102: Growing a 2um thick undoped GaN layer 2 under a low pressure of 200 torr.
[0030] Step 103: Growing a 2um thick Si-doped n-type GaN carrier layer 31 under a low pressure of 40 torr.
[0031] Step 104: Growing a Si-doped n-type GaN contact layer 32 with a thi...
Example Embodiment
[0037] Example 2
[0038] The embodiment of the present invention provides a method for growing an epitaxial layer of a light emitting diode chip, see figure 2 , The method includes:
[0039] Using the MOCVD method to sequentially grow undoped GaN layer 2, n-type layer 3, quantum well active region layer 4, and p-type layer 5 on substrate 1, such as figure 2 As shown, the growth pressure of the quantum active region layer 4 is 600 to 750 torr.
[0040] Preferably, the growth pressure of the n-type contact layer 32 is 600 to 750 torr.
[0041] Further, the growth pressure of the n-type GaN carrier layer 31 is 40 to 400 torr. In actual growth, in order to increase the growth rate, 40 to 400 torr is generally used to grow the n-type GaN carrier layer 31. Obviously, the n-type GaN carrier layer 31 can also be grown at a high pressure of 600 to 750 torr, and the growth of the high pressure at 600 to 750 torr can further increase the cracking effect of the material and reduce the defec...
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