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Method for realizing double-surface asymmetric modification of single-layer graphene

A graphene, asymmetric technology, used in chemical instruments and methods, non-metallic elements, carbon compounds, etc.

Active Publication Date: 2015-01-07
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the same chemical environment for the reaction on both sides, this method can only achieve double-sided symmetric modification of single-layer graphene, that is, the modification groups on the upper and lower sides are the same.

Method used

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  • Method for realizing double-surface asymmetric modification of single-layer graphene
  • Method for realizing double-surface asymmetric modification of single-layer graphene
  • Method for realizing double-surface asymmetric modification of single-layer graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1. Carrying out double-sided asymmetric covalent modification to single-layer graphene

[0036] 1) On Si / SiO 2 Substrate (Si layer thickness is 600μm, SiO 2 The substrate layer is 300nm) and the surface adopts the mode of mechanical exfoliation to prepare single-layer graphene, wherein figure 2 (a) is the Raman spectrum of single-layer graphene on the substrate surface.

[0037] 2) The photochlorination reaction is carried out on the surface of single-layer graphene, and the single-sided chlorination modification of graphene is realized under the protection of the substrate. The specific implementation steps are:

[0038] Using dilute hydrochloric acid (9mol / L) and manganese dioxide powder (5g) to react at 60°C to produce chlorine gas, using nitrogen as a carrier gas to feed the newly produced chlorine gas into the photochemical reaction system of graphene, under the irradiation of ultraviolet light, chlorine gas The decomposition produces chlorine radicals...

Embodiment 2

[0044] Example 2, Carrying out double-sided asymmetric covalent modification to single-layer graphene

[0045] 1) Chemical vapor deposition growth is carried out on the surface of copper foil, so that single-layer graphene is precipitated on the copper surface, and the graphene is transferred to another Si / SiO 2 on the substrate. Wherein, the annealing temperature is 1000° C., the growth environment is a low pressure environment (500 mTorr), the carbon source is methane, and the growth atmosphere is methane 35 sccm / hydrogen 2 sccm.

[0046] 2)-3) steps are the same as in Example 1.

[0047] 4) Using the PMMA film as a protective substrate, carry out nitrophenylation modification on the other side of the chlorination-modified graphene to obtain double-sided asymmetric covalently modified single-layer graphene. The specific implementation steps are:

[0048] The sample is placed in a p-nitrobenzene diazonium salt solution with a concentration of 20mmol / L, the temperature is c...

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Abstract

The invention discloses a method for realizing the asymmetric covalent modification of single-layer graphene, which comprises the following steps: (1) preparing graphene on a substrate; (2) performing covalent chemical modification on the surface of the graphene to obtain single-surface modified graphene; (3) spin coating a PMMA (polymethyl methacrylate) solution on the surface of the single-surface modified graphene, baking the PMMA to form a thin polymer film, and then etching the substrate in a hydrofluoric acid water solution to separate the graphene from the substrate; (4) using the thin PMMA film as a protective base, and performing covalent chemical modification different from the method in the step (2) on the other side of the single-surface modified graphene to realize the double-surface asymmetric modification of the graphene; and (5) transferring the double-surface asymmetric modified graphene to the surface of another substrate, and removing the thin PMMA film to obtain the double-surface asymmetric modified graphene. By using the thin PMMA film as the operating medium, the method first realizes the double-surface asymmetric covalent modification of single-layer graphene, and is suitable for any graphene covalent modification method.

Description

technical field [0001] The invention relates to a method for realizing double-sided asymmetric modification of single-layer graphene. Background technique [0002] Graphene has a stable two-dimensional lattice structure and excellent electrical and mechanical properties. Its synthesis, properties and applications have been the common concern of the scientific and industrial circles in recent years. As an ideal two-dimensional atomic crystal, the carrier mobility of graphene is more than 2 orders of magnitude higher than that of traditional silicon materials. In addition to its flexibility and good light transmission, on the one hand, it is highly valued as a flexible transparent conductive film material worldwide. , on the other hand, as the basic material of nanoelectronic devices in the future, it has broad development prospects. [0003] One of the challenges facing the application of graphene in the field of devices comes from its essential characteristic of zero bandga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/194
Inventor 刘忠范张黎明于静雯彭海琳谢芹
Owner PEKING UNIV
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