A method for preparing high-k gate dielectric on the surface of multilayer graphene

Abstract

The invention provides a method for preparing a high-k gate medium on the surface of multi-layer graphene. The method comprises the steps of: preparing a metal thin film on the surfaces of the two layers or more than two layers of graphene, and introducing a dangling bond on the surface of the graphene; then removing a metal thin film by adopting a chemical corrosion method, cleaning and drying the surface of the graphene; and finally, utilizing H2O as an oxidizing agent and a metal source for reaction, depositing a metal oxide thin film on the surface of the graphene by adopting am atom layer depositing method, and adopting the metal oxide thin film as a high-k gate medium layer. The method has the following beneficial effects that: due to the introduction of the metal thin film, the dangling bond is introduced into a graphene crystal lattice effectively, meanwhile, the graphene on the top layer can be reserved in the subsequent metal dissolving process, and due to the action of the dangling bond, the uniform and ultrathin high-k gate medium layer can be prepared by the atom layer depositing method.

Description

technical field [0001] The invention belongs to the field of semiconductor preparation, in particular to a method for preparing a high-k gate dielectric on the surface of multilayer graphene. Background technique [0002] According to Moore's Law, the integration level of chips doubles every 18 months to 2 years, that is, the processing line width is reduced by half. The development path to extend Moore's Law by utilizing the shrinking size of silicon-based semiconductor materials (the processing limit of silicon materials is generally considered to be 10 nanometer line width) is gradually approaching the end. With the continuous reduction of device size in the field of microelectronics, silicon material is gradually approaching its processing limit. [0003] In order to prolong the life of Moore's Law, the international semiconductor industry has proposed Beyond Silicon technology (BeyondSilicon), among which the most promising graphene came into being. Graphene, as a new...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a high-k gate dielectric on the surface of multilayer graphene, which is used to solve the problem of using conventional atomic layer deposition in the prior art without functional Nucleation and growth of uniform ultra-thin high-k dielectric layer on the surface of chemically treated graphene

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