Etching method for strip-type structure
A strip-shaped, to-be-etched technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc.
Active Publication Date: 2013-01-02
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
Since the corners of the strip structure are formed by two-step etching, the shape of the corners of the generated strip structure is relatively good, but in the second etching process, due to the soft photoresist, the corners of the strip structure will still change. Overetched to form rounded corners
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[0024] In the prior art, in most cases, the material used as a mask for dry etching is photoresist. Since the photoresist is relatively soft, it is easy to over-etch the edges and corners of the strip structure to form rounded corners when etching the strip structure. , the inventor found through research that a layer of harder mask layer pattern is formed on the surface of the film to be etched, and the film to be etched is etched using the harder mask layer pattern as a mask. The pattern of the film layer will not be deformed, so that the etched pattern can be highly consistent with the pattern of the mask layer, and the edges and corners of the etched strip structure end points will not be over-etched to form rounded corners.
[0025] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[002...
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The invention discloses an etching method for a strip-type structure. The method includes that a substrate is provided, a film to be etched is formed on the surface of the substrate, a mask layer is formed on the surface of the film to be etched, a through hole which penetrates through the mask layer is formed in the mask layer, the through hole corresponds to a position of a short edge of the strip-type structure to be formed, strip-type patterns are formed on the surface of the mask layer, the mask layer is etched with the strip-type patterns serving as a mask until the film to be etched is exposed to form a mask layer pattern, and the film to be etched is etched with the mask layer pattern serving as the mask until the substrate is exposed. According to the etching method, a layer of hard mask layer is formed on the surface of the film to be etched, the film to be etched is subjected to etching with the hard mask layer serving as the mask, the etched pattern is highly consistent with the mask pattern, and corner angles of endpoints of etched strip-type structure can not be excessively etched to be round corners.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an etching method for strip structures in semiconductor manufacturing. Background technique [0002] With the rapid development of Ultra Large Scale Integration (ULSI), the manufacturing process of integrated circuits has become more and more complex and refined, and the width of strip structures such as polysilicon gates and metal interconnections has become increasingly The distance between strip structures becomes smaller and smaller, and it becomes more and more difficult to form strip structures that meet the process requirements by dry etching. [0003] In the current manufacturing technology, the strip structure is usually formed by exposing and developing the photoresist layer with a mask plate with a strip pattern to form a strip-shaped photoresist, and using the strip-shaped photoresist as a mask The film to be etched is dry-etched to form a strip structure. ...
Claims
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IPC IPC(8): H01L21/311H01L21/3213H01L21/28
Inventor 周俊卿孟晓莹张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP