Silicon-based uniwafer photoelectricity integrated receiving chip for plastic optical fiber communication

Abstract

The invention discloses a silicon-based uniwafer photoelectricity integrated receiving chip for plastic optical fiber communication, and relates to a silicon-based uniwafer photoelectricity integrated circuit. The chip is a uniwafer photoelectricity integrated receiving chip with the wavelength of 650 + / - 17.8nm for the plastic optical fiber communication; and a photoelectricity probe chip and a preposed amplifying integrated circuit chip in a light receiving module with the wavelength of 650 + / - 17.8nm for the conventional plastic optical fiber communication can be replaced by the chip, so that the uniwafer photoelectricity integration of the photoelectricity probe and the preposed amplifying integrated circuit with the wavelength of 650 + / - 17.8nm is realized; a requirement on 100Mbps transmission velocity for the plastic optical communication can be met; and the chip can be used for the light receiving end with the wavelength of 650 + / - 17.8nm for the plastic optical fiber communication; and moreover, the chip can be prepared by a 0.5-micron standard binary-coded decimal (BCD).

Description

technical field [0001] The invention relates to a silicon-based single-chip photoelectric integrated circuit, in particular to a silicon-based single-chip photoelectric integrated receiving chip for plastic optical fiber communication. Background technique [0002] Plastic optical fiber communication is a new generation of short-distance transmission system. It has the advantages of simplicity, high speed, low cost, and flexible and bendable optical fiber. It can successfully solve the "last 100 meters" access problem in optical fiber communication and replace the existing copper cables. Realize fiber-to-the-desktop all-optical network communication. The development of plastic optical fiber communication not only conforms to the development strategy of optical fiber broadband to the home and "optical into copper" in the national "Twelfth Five-Year Plan", but also plays an important role in promoting the integration of three networks, smart home networks, industrial control, ...

AI Technical Summary

Problems solved by technology

However, the BCD standard process can integrate Bipolar devices, CMOS devices and DMOS devices on the same substrate, which combines the advantages of high transconductance, strong load driving capability of bipolar devices, high integration and low power consumption of CMOS, and can also become a An innovative idea and beneficial exploration for the research of silicon-based monolithic optoelectronic integrated circuits. At present, there are few reports on the related technologies that can use the standard 0.5μm BCD process to prepare 650nm±17.8nm monolithic optoelectronic integrated receiving chips for plastic optical fiber communication.

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