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Silicon-based monolithic optoelectronic integrated receiver chip for automatic power meter reading system

A meter reading system, a silicon-based monolithic technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as unfavorable promotion and popularization of plastic optical fiber communication technology, complicated manufacturing and assembly processes, and affecting system reliability, etc. Poor short-wave response, reducing junction capacitance, and overcoming the effect of large junction capacitance

Active Publication Date: 2016-06-01
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, these chips are all in a discrete state, there are many system components, and the manufacturing and assembly process is complicated, which will affect the reliability of the system. Moreover, the main components are imported from abroad, and the cost is high, which is not conducive to the promotion and popularization of plastic optical fiber communication technology.

Method used

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  • Silicon-based monolithic optoelectronic integrated receiver chip for automatic power meter reading system
  • Silicon-based monolithic optoelectronic integrated receiver chip for automatic power meter reading system
  • Silicon-based monolithic optoelectronic integrated receiver chip for automatic power meter reading system

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Embodiment Construction

[0029] The following embodiments will further illustrate the present invention in conjunction with the accompanying drawings.

[0030] see Figure 1~6 , the embodiment of the present invention is provided with a silicon-based photodetector and an amplifying integrated circuit followed by the silicon-based photodetector;

[0031] The silicon-based photodetector adopts an "N+ / N-Well / P-Sub" structure, and the vertical structure of the silicon-based photodetector is as follows from bottom to top: the first layer is a low-doped P-type silicon substrate ( P-Substrate) 1; the second layer is N well (N-Well) 2; the third layer is N-type heavily doped silicon (N+) 4, P-type heavily doped silicon (P+) 3, metal aluminum (Al) 7; The fourth to sixth layers are three-layer SiO 2 Insulating dielectric layers 5, 8, 9; the seventh layer is Si 3 N 4 Surface passivation layer 10; the P-type silicon substrate (P-Substrate) 1, N well (N-Well) 2, N-type heavily doped silicon (N+) 4, P-type heav...

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Abstract

The invention discloses a silica-based uniwafer optoelectronic integration receiving chip used for an automatic electricity meter reading system and relates to optoelectronic integration circuits. The silica-based uniwafer optoelectronic integration receiving chip used for the automatic electricity meter reading system is provided with a silica-based optoelectronic detector and an amplification integration circuit followed by the silica-based optoelectronic detector. According to the longitudinal structure of the silica-based optoelectronic detector, a low-doped P-type silicon substrate, an N well, N-type heavily doped silicon, a P-type heavily doped silicon, metallic aluminum, three SiO2 insulation dielectric layers and a Si3N4 surface passivation layer are sequentially arranged from bottom to top. The amplification integration circuit followed by the silica-based optoelectronic detector is provided with a mutual resistance pre-amplifier, a limiting amplifier and a differential output buffering circuit, wherein the input end of the mutual resistance pre-amplifier is connected with the silica-based optoelectronic detector; the output end of the mutual resistance pre-amplifier is connected with the input end of the limiting amplifier; the output end of the limiting amplifier is connected with the input end of the differential output buffering circuit. The silica-based uniwafer optoelectronic integration receiving chip used for the automatic electricity meter reading system can achieve the uniwafer optoelectronic integration of the amplification integration circuit of the optoelectronic detector of 650 nm + / -17.8 nm and meet the requirement for the 100Mbps transmission rate of the automatic electricity meter reading system.

Description

technical field [0001] The invention relates to an optoelectronic integrated circuit, in particular to a silicon-based monolithic optoelectronic integrated receiving chip used in an automatic electric meter reading system. Background technique [0002] With the development of intelligent community management, the automatic meter reading system has replaced the traditional manual meter reading system, and has been paid more and more attention by the power sector. The reliable, accurate and practical automatic power meter reading system has a broad market prospect. The existing electric remote automatic meter reading system adopts a bipolar reporting mechanism. The first stage is from the meter to the concentrator, and the transmission method is RS485 and 220V power line carrier network; the second stage is from the concentrator to the power management center, and the transmission method is wired. Local telephone network, broadband metropolitan area network, GPRS, wireless com...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L31/103H01L31/0352H01L31/0216
Inventor 程翔范程程陈朝史晓凤郑明徐攀
Owner XIAMEN UNIV
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