Silicon-based photoelectric detector for photoelectric monolithic integration and preparation method thereof

Abstract

The invention discloses a silicon-based photoelectric detector for photoelectric monolithic integration and a preparation method thereof, which relates to a silicon-based photoelectric monolithic integrated circuit. The invention provides the silicon-based photoelectric detector which is completely compatible with the commercial BCD standard technology and is used for photoelectric monolithic integration, and provides the preparation method thereof. The silicon-based photoelectric detector is provided with a P type silicon substrate, a BN+ epitaxial layer, a BP+ epitaxial layer, an N-EPI epitaxial layer, an N-well layer, a P-well layer, a P+ layer, an N+ layer, an Al layer, a field oxide layer, SiO2 insulating medium layers and a Si3N4 surface passivation layer, wherein the P type siliconsubstrate, the BN+ epitaxial layer, the BP+ epitaxial layer, the N-EPI epitaxial layer, the N-well layer, the P-well layer, the P+ layer and the N+ layer are arranged on the same silicon wafer; the field oxide layer is a silicon oxide layer generated on the surface of the silicon wafer; a metallic aluminum layer is deposited on the surface of the silicon wafer; three SiO2 insulating medium layersare attached to the silicon substrate from bottom to top according to the preparation sequence through the deposition technology; and the Si3N4 surface passivation layer is attached to the SiO2 insulating medium layers through the deposition technology.

Description

technical field [0001] The invention relates to a silicon-based photoelectric single-chip integrated circuit, in particular to a silicon-based photodetector for photoelectric monolithic integration and a preparation method thereof which is fully compatible with the BCD standard process. Background technique [0002] The function of the photodetector is to efficiently convert the input optical signal into an electrical signal. In recent years, silicon-based photodetectors have developed rapidly and are widely used in optical storage systems, photoelectric measurement, optical data transmission and optical interconnection, optical computing, and image storage and processing. For example, silicon-based photodetectors can be applied to optical pickup heads of CD-ROM, digital video disc (DVD), etc., as well as 850nm optical fiber communication and 650nm plastic optical fiber communication. [0003] Taking the 850nm light receiving chip as an example, the light receiving chip is ...

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Problems solved by technology

[0009] The purpose of the present invention is to provide a kind of photoelectric monolithic photodetector that is fully compatible with the commercial BCD standard process in view of the shortcomings of the existing silicon-based photodetectors, such as poor short-wave response, low frequency response, and incomplete compatibility between the preparation process and the standard process. Chip-integrated silicon-based photodetectors and fabrication methods thereof

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