A Method for Determining Microdischarge Threshold of Coaxial Structure

Abstract

The invention discloses a method for determining a coaxial configuration micro-discharging threshold value. The method comprises the following steps of: determining an electronic movement locus and an electronic movement speed in a coaxial structure; converting probability of an emergence speed satisfying Maxwellian distribution into a joint probability density function of transit time; respectively carrying out maximum value and monotonicity processing to four classes of probability density functions to obtain a processed joint probability density function; taking an electron collision kinetic energy as an incidence electron energy of a secondary electron emission characteristic of a material to obtain a secondary electron multiplication function generated during electron collision under the transit time; constructing a steady-state equation which satisfies the electron number during micro discharging; judging whether a voltage generates micro discharging by solving an effective secondary electron multiplication rate in the steady-state equation; and gradually calculating an effective multiplication rate of a next voltage with a bisection method, wherein a corresponding voltage is a micro-discharging threshold value when the effective multiplication rate is 1. According to the method disclosed by the invention, an accurate micro-discharging threshold value can be obtained, and meanwhile, the threshold value can be quickly obtained.

Description

technical field [0001] The invention relates to a method for determining the micro-discharge threshold of a coaxial structure, which is suitable for the design of microwave components with a coaxial structure without micro-discharge and the prediction of the micro-discharge threshold of the microwave components with a coaxial structure. Background technique [0002] The micro-discharge effect is also called the secondary electron multiplication effect, which means that the component is at 1×10 -3 When the pressure is Pa or lower, the resonant discharge phenomenon occurs under the condition of high power. High-power microwave components in spacecraft loads, such as output multiplexers, filters, switch matrices, and antenna feeds, are prone to micro-discharge effects. Once micro-discharge effects occur, serious consequences will occur: noise levels increase and output power decreases The standing wave ratio of the microwave transmission system increases, the reflected power i...

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Problems solved by technology

[0004] However, the shortcomings of the above existing methods are mainly reflected in: (1) the velocity distribution and phase distribution when the electrons are actually emitted are not considered; (2) a fixed secondary electron emission model or simple fixed parameters to describe the secondary electron emission are used , so that the secondary electron emission characteristics of the actual component surface cannot be described, resulting in deviations in the calculated microdischarge threshold of microwave components; (3) The calculation time is long, which is not conducive to providing reference for the design of microwave components with high microdischarge threshold

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