Manufacturing method of copper interconnection structure

A technology of copper interconnection structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the reliability of semiconductor devices, electrical leakage, etc., and achieve the goal of suppressing electromigration and improving reliability Effect

Active Publication Date: 2013-01-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As the size of semiconductor devices continues to shrink, the spacing between copper interconnects continues to shrink. This thicker re

Method used

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  • Manufacturing method of copper interconnection structure
  • Manufacturing method of copper interconnection structure
  • Manufacturing method of copper interconnection structure

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Embodiment Construction

[0021] Next, the present invention will be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0022] It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when a...

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Abstract

The invention discloses a manufacturing method of a copper interconnection structure, which comprises the steps as follows: a) providing a semiconductor substrate, forming an oxygen-containing dielectric layer on the upper surface of the semiconductor substrate, and forming a groove for forming the copper interconnection structure in the oxygen-containing dielectric layer, b) forming a tantalum metal layer on the oxygen-containing layer and in the groove, c) forming a copper-manganese seed crystal layer on the tantalum metal layer, and d) forming the copper interconnection structure on the copper-manganese seed crystal layer in the groove and performing an annealing process. According to the manufacturing method, the tantalum metal layer is formed between the oxygen-containing dielectric layer and the copper-manganese seed crystal layer, the annealing process is performed to form a thinner anti-diffusion barrier layer by reactions of oxygen in the oxygen-containing dielectric layer and manganese in the copper-manganese seed crystal layer with the tantalum metal layer, cooper is effectively prevented from diffusing to the oxygen-containing dielectric layer, and the electric resistance of the copper interconnection structure is not affected.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a copper interconnection structure. Background technique [0002] As the size of semiconductor devices continues to decrease, the density of driving current and switching frequency in semiconductor devices continue to increase. Electromigration (EM) is prone to occur on copper interconnect structures with high current density and high frequency changes. As we all know, electromigration is one of the important factors affecting the reliability of the copper interconnection structure. Electromigration may lead to the thinning of the copper interconnection structure, increase its resistivity, and even cause the copper interconnection structure to break. [0003] Electromigration is caused by electrons moving metal atoms in the direction of the current, and the speed of the movement is determined by the current density. For the copper interconnect ...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 彭冰清
Owner SEMICON MFG INT (SHANGHAI) CORP
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