Wet etching method for metal layer on front surface of high inverse-voltage Schottky diode
A Schottky diode and wet etching technology, which is applied to electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of not being able to effectively take into account the over-corrosion and residue of the underlying metal layer Ti, which affects high back-voltage Schottky diodes Electrical parameter characteristics, high reverse voltage Schottky diode reverse leakage and other issues, to achieve the effect of solving over-corrosion and residue, easy operation, and good corrosion rate
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Embodiment 1
[0034] (1) if figure 2 As shown, a photoresist 1 with a thickness of 2 μm is coated on the surface of the front metal layer structure on the Schottky diode tube core substrate 5 that is evaporated and plated with Ti layer 4, Ni layer 3, and Ag layer 2 from bottom to top. Finally, place the tube core in a nitrogen oven to harden the photoresist 1 once, the temperature of the first hardening is 110 °C, N 2 The flow rate is 20L / min, and the baking time is 30min.
[0035] (2) Soak the die in the first corrosive solution for 4 minutes for Ni / Ag corrosion. The first corrosive solution contains HNO 3 with CH 3 COOH, aqueous solution at 18°C, HNO in the first corrosion solution 3 with CH 3 The total mass concentration of COOH is 80%, HNO 3 with CH 3 The mass ratio of COOH is 1:3. After corrosion, place the core in deionized water at a temperature of 18°C to overflow for 2 minutes for cleaning. The cleaned core is dried in a semiconductor dryer. The speed is 1600rpm, the time...
Embodiment 2
[0040] The cross-sectional schematic diagram of the front metal layer of the high reverse voltage Schottky diode in each step of this embodiment is the same as that of Embodiment 1, so it will not be repeated here. The difference from Embodiment 1 lies in the process parameters in each step:
[0041] (1) if figure 1 As shown, a photoresist 1 with a thickness of 3 μm is coated on the surface of the front metal layer structure on the Schottky diode die substrate 5 that is sequentially evaporated and plated with Ti layer 4, Ni layer 3, and Ag layer 2 from bottom to top. Finally, place the tube core in a nitrogen oven to harden the photoresist 1 once, the temperature of the first hardening is 130°C, N 2 The flow rate is 22 L / min, and the baking time is 25 minutes.
[0042] (2) Soak the die in the first corrosive solution for 5 minutes for Ni / Ag corrosion. The first corrosive solution contains HNO 3 with CH 3 COOH, aqueous solution at 20°C, HNO in the first corrosion solution 3...
Embodiment 3
[0047] The cross-sectional schematic diagram of the front metal layer of the high reverse voltage Schottky diode in each step of this embodiment is the same as that of Embodiment 1, so it will not be repeated here. The difference from Embodiment 1 lies in the process parameters in each step:
[0048] (1) if figure 1 As shown, a photoresist 1 with a thickness of 4 μm is coated on the surface of the front metal layer structure on the Schottky diode die substrate 5 that is sequentially evaporated and plated with Ti layer 4, Ni layer 3, and Ag layer 2 from bottom to top. Finally, place the tube core in a nitrogen oven to harden the photoresist 1 once, the temperature of the first hardening is 150 ° C, N 2 The flow rate is 25L / min, and the baking time is 20min.
[0049] (2) Soak the die in the first corrosive solution for 8 minutes for Ni / Ag corrosion, the first corrosive solution contains HNO 3 with CH 3 COOH, aqueous solution at 22°C, HNO in the first corrosion solution 3 wit...
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