50results about How to "Control corrosion rate" patented technology

Disclosed herein is a non-toxic, bioresorbable, magnesium based alloy for use in production of implants. Specifically exemplified herein are alloy embodiments useful for orthopedic implants. Also disclosed are alloy materials that incorporate magnesium, calcium and strontium.

The invention relates to an absorbable magnesium alloy stent of anticorrosion and drug release composite coating and a preparation method thereof. The absorbable magnesium alloy stent comprises a magnesium alloy stent skeleton and composite coating, wherein the surface layer of the magnesium alloy stent skeleton is an inorganic anti-corrosion coating, the outside of the inorganic anti-corrosion coating is provided with organic sealing and drug release composite coating; and the inorganic anti-corrosion coating is dense coating with metallurgical structure composed of MgSiO3, MgO and SiO2 with zeolite structure. The inorganic anti-corrosion coating is prepared on the surface of a matrix through microarc oxidation, and the sealing and drug release composite coating composed of crosslinked gelatin/PLGA medicine-carried nanospheres blend film is prepared outside the anti-corrosion coating. The absorbable magnesium alloy stent of the invention effectively controls the corrosivity of the magnesium alloy stent, the organic coating has double functions, the use of the sealing inorganic coating increases the corrosion resistance, controls the drug to release, and reduces the burst effect of the drug to ensure that the drug is released in a certain concentration continuously and slowly. Meanwhile, each coating can be biodegraded and the degradation product is non-toxic, thus effectively improving the biocompatibility and blood compatibility of the magnesium alloy surface.

The invention discloses a metallographical corrosive for observing delta-Ni3Nb phase in a ferronickel-based superalloy structure and a using method of the metallographical corrosive. The metallographical corrosive comprises the following components by volume fraction: 26-33% of hydrochloric acid, 30-37% of nitric acid, 13-18% of hydrofluoric acid and 12-31% of ethyl alcohol; every 100 mL of the metallographical corrosive contains 2g of oxalic acid and 1g of copper sulfate; the mass percentage concentration of the hydrochloric acid is 36%; the mass percentage concentration of the nitric acid is 68%; the mass percentage concentration of the hydrofluoric acid is 40%; the copper sulfate is anhydrous copper sulfate; the ethyl alcohol is anhydrous ethyl alcohol; and the selected chemical reagents are analytical reagents. The using method comprises the following steps: coating the prepared metallographical corrosive on the metallographical surface of a ferronickel-based superalloy sample; chemically corroding for 5-8 seconds; washing and drying the metallographical corrosive on the metallographical surface by clear water and alcohol; and observing the delta-Ni3Nb phase in the microscopic structure through an optical microscope and a scanning electron microscope.

The invention discloses a coptis extract silicon slice texturing agent. The coptis extract silicon slice texturing agent is characterized by being prepared from, by weight, 5-10 parts of coptis roots, 1.5-2.5 parts of sodium hydroxide, 3-5 parts of sodium tripolyphosphate, 0.3-0.5 part of lauryl sodium sulfate, 0.3-0.5 part of sodium lauroamphoacetate, 5-10 parts of texturing modifiers, 0.3-0.5 part of coconut oil, 0.5-1 part of sodium caseinate, 0.3-0.5 part of maltodextrin and 100-150 parts of water. By means of the silicon slice texturing agent, the texturing efficiency can be improved, the stability of the texturing technology can be improved, dosage of chemicals can be reduced, the silicon slice texturing agent is free of toxicity, harmless, green and environmentally friendly, the production cost is reduced, the transfer efficiency of a battery slice is effectively improved, good antibacterial and cleaning properties are achieved, and the product quality is stable.

The invention discloses an alkaline type texturing process of monocrystalline silicon wafer, which is used for solving the problems that secondary reflection cannot be completely formed very well and good contact with conductive slurry is difficult to form due to uneven diffusion as size and arrangement of a textured surface obtained by the alkaline type texturing process in the prior art are random. The alkaline type texturing process mainly comprises the following steps: (a) removing an affected layer; (b) preparing a mask; (c) windowing the mask; (d) texturing on a surface; and (e) removing the mask. The alkaline type texturing process disclosed by the invention is simple in step, suitable for industrial production and low in cost; the obtained monocrystalline silicon wafer textured structure is an inverted pyramid structure with regular size and arrangement, so that secondary reflection can be completely formed very well; and meanwhile, diffusion is guaranteed to be uniform and coating of conductive slurry is facilitated, so that thickness of the conductive slurry is controlled easier, contact with the conductive slurry is good, metal sintering is facilitated, and contact resistance is reduced.

The invention relates to the technical field of microelectronic processing and especially to a semiconductor silicon wafer corrosive liquid. The semiconductor silicon wafer corrosive liquid is formed by mixing nitric acid, hydrofluoric acid, and glacial acetic acid according to a volume ratio of 4-14: 4-14: 6-18. A semiconductor silicon wafer is placed in a closed container containing the semiconductor silicon wafer corrosive liquid in order to be corroded on a low-temperature condition. Different corrosion demands are satisfied by regulating the ratio of the nitric acid to the hydrofluoric acid. The corrosion rate and the corrosion depth of the semiconductor silicon wafer, and the surface cleanliness of the corroded semiconductor silicon wafer can be controlled on the low-temperature condition. The corrosion rate at a low-temperature environment is less than that at a normal-temperature environment, so the corrosive uniformity of the semiconductor silicon wafer is easier to control. The semiconductor silicon wafer corrosive liquid is easy to form, attainable in raw material, low in cost, and very suitable for industrial production of semiconductor microelectronics.

The invention discloses a method for flowingly corroding complicated slender copper tube cores made of aluminum alloy castings. Slots are formed on embedded copper tube cores in the prior art, and the copper tube cores are corroded by a method for soaking the copper tube cores in corrosive liquid and has shortcomings that the corrosion efficiency is low; the copper tube cores cannot be thoroughly corroded, and the quality of castings which are processed in follow-up procedures such as thermal treatment for the castings is affected; and matrixes of the aluminum alloy castings are corroded. In order to overcome the shortcomings, the method is used for dynamically corroding the complicated slender copper tube cores made of the aluminum alloy castings by means of enabling corrosive liquid to flow. The method has the advantages that the corrosive liquid flows in copper tubes by the aid of corrosion-resistant magnetic valves, and the corrosion efficiency is improved; the flow rate of the corrosive liquid can be adjusted, so that the corrosion speed is controlled; the multiple copper tubes or a plurality of castings can be corroded simultaneously by the aid of a multi-tube joint; the requirement on corroding parts with different apertures can be met by means of replacing different sleeves; and the corrosive liquid is basically prevented from being in contact with matrixes of the castings, and accordingly the matrixes are protected against being corroded.

The invention discloses a low-reflectivity silicon wafer texturing agent. The low-reflectivity silicon wafer texturing agent is characterized by being prepared by, by weight, 0.3-0.5 part of sodium pyrophosphate, 1.5-2.5 parts of sodium hydroxide, 0.5-1 part of disodium C-[2-[2-[2-(dodecyloxy)ethoxy]ethoxy]ethyl] sulphonatosuccinate, 0.3-0.5 part of trisodium N-iminodiacetate, 0.1-0.2 part of diethylenetriamine pentaacetic acid, 0.3-0.5 part of konjac glucomannan, 5-10 parts of texturing regulator, 0.2-0.4 part of tricaprylin and 100-150 parts of water. The low-reflectivity silicon wafer texturing agent can improve texturing efficiency and stability of texturing process and can make suede more uniform, lower reflectivity, effectively improve conversion efficiency of cells, improve performance of the cells and is stable in product quality.

The invention discloses an etching solution for selectively etching a gallium arsenide solar cell cap layer, which is composed of the following components in parts by mass: 5-150 parts of component A, 10-100 parts of component B, 1-20 parts of component C, 1-20 parts of component D and 100 parts of component E. The component A is solid citric acid; the component B is oxydol; the component C is amine compounds; the component D is amino acid compounds; and the component E is deionized water. Preferably, the purity of the component A is greater than 99.8%, and the mass concentration of the component B is 30%. The invention also discloses a preparation method of the etching solution. The etching solution can well control the etching rate, has higher etching uniformity, and thoroughly removes the residues, thereby obtaining the cell gate line structure with smooth side bench.

The present invention discloses a MEMS sandwich accelerometer sensitive chip wet etching processing method, a single-layer oxide layer is grown on a silicon wafer, double-sided lithographic etching the single-layer oxide film layer is performed for 3 times, the depth of each tie of etching is precisely controlled, and the single-layer oxide film layer is divided into three layers of different structures of oxide film layers. At a temperature of 60-80 DEG C, the silicon wafer is wet-etched, the first silicon etching time is 20 to 30 minutes, the first layer oxide film layer is etched; the second silicon etching time is 150 to 160 minutes, the second layer oxide film layer is etched; the silicon wafer is wet-etched at a temperature of 30-40 DEG C in the third etching, the etching time is 30 to 40 minutes, and the third layer oxide film layer is etched. A sensitive chip with smooth surface and accurate dimension can be processed by the method, and by improvement of the method, the quality and rate of finished products of the sensitive chip can be greatly improved.

The invention relates to a bottom electrode bottom-removing etching method of a space three-junction gallium arsenide solar battery, comprising the following steps of: (1) spreading rubber and drying; (2) configuring main etching liquid and 201 etching liquid; (3) etching and washing wafers, wherein the etching time of the wafers which are put into the main etching liquid is 30-40s; (4) cleaning an organic solvent, wherein in the step (2), the peroxide, the hydrofluoric acid and the deionized water in the main etching liquid are in the volume proportion: of 1:1:8; washing the wafers 4-6 times by using the deionized water, then, putting the wafers into the 201 etching liquid to etch for 10-20s; and finally, taking the wafers out of the etching liquid and washing the wafers 6-10 times by using the deionized water. The invention has simple technology and scientific design, adopts a bottom electrode etching technology to increase the yield of bulk batteries, bottom electrode firmness of batteries and battery performance, and promotes the wide application of three-junction solar batteries in the field of new environment-friendly energy resources.

The invention relates to a low-foam glass substrate cleaning solution, and belongs to the field of microelectronic materials. The low-foam glass substrate cleaning solution comprises the following components in percentage by weight: 1 to 45 percent (preferably 3 to 30 percent ) of strong alkali substance, 0.1 to 50 percent (preferably 0.5 to 20 percent ) of chelating agent, 0.1 to 15 percent (preferably 0.2 to 10 percent ) of defoaming agent, 30 to 99.3 percent (preferably 40 to 98 percent ) of deionized water, and 0.1 to 25 percent (preferably 0.2 to 20 percent ) of non-ionic surface active agent with a structure as shown in a formula I, wherein m is 1 to 3, R is H or CH3, and n is 2 to 50. The cleaning solution provided by the invention is non-toxic and non-corrosiveness, free of low-boiling-point organic volatile matters, non-pollute to the environment, and capable of effectively removing residues on the surface of a surface substrate without corroding a glass substrate at the sametime.

The invention discloses a bamboo extraction solution silicon wafer texture-etchant which is characterized by being prepared from the following raw materials in parts by weight: 10-15 parts of fresh bamboo leaves, 3-5 parts of sodium tripolyphosphate, 0.3-0.5 part of sodium carbonate, 1.5-2.5 parts of sodium hydroxide, 0.5-1 part of octadecyl diethoxy glycine betaine, 5-10 parts of a texture-etching adjuster, 0.2-0.4 part of cottonseed oil, 1-2 parts of polyethylene glycol, 0.3-0.5 part of xanthan gum and 100-150 parts of water. The silicon wafer texture-etchant disclosed by the invention not only can improve the texture-etching efficiency and the stability of a texture-etching process and effectively improve the conversion efficiency of a battery sheet, but also can reduce the texture-etching corrosion amount, reduce the wrapping degree of the silicon wafer, and reduce fragments. The silicon wafer texture-etchant is non-toxic and harmless, and safe and environmental-friendly, and the product is stable in quality.

The invention discloses a preparing method for the magnesium and magnesium alloy with the surface provided with a silane/sodium hyaluronate composite coating. According to the method, the magnesium and magnesium alloy are subjected to hydro-thermal treatment in an alkaline solution, and a magnesium hydrate film with active hydroxyl is obtained to serve as a substrate with a protection function anda pretreatment layer improving bonding force with silane; then, silane molecules are assembled to the magnesium and magnesium alloy through molecular bonds; and finally, a dipping method is used forobtaining a covalent bond grafted EDC/NHS crosslinking modified sodium hyaluronate coating on the surface of a silanization sample, and the composite coating is obtained after drying. Through the method, the corrosion speed of the magnesium and magnesium alloy can be effectively controlled, the corrosion rate is reduced, introduction of harmful impurities is avoided, and good biocompatibility anddegradability are achieved; a positive role is played for ophthalmic disease treatment through slowly-released magnesium ions, and the success ratio of operation is guaranteed; and the product cost islow, the patient expense is reduced, the method is expected to become a new ophthalmology intervention therapy method, and a new thought is brought for ophthalmic disease treatment.

The invention relates to the technical field of reinforced concrete structures. More specifically, the present invention relates to a method for manufacturing, the invention relates to an acceleratedcorrosion method and device for FRP reinforced damaged RC components in a simulated marine environment. The method comprises manufacturing an RC component, manually accelerating electrochemical corrosion of the reinforcing steel bars in an electrolyte solution to obtain a damaged RC component with cracks, using crack pouring glue for pouring glue and repairing cracks, using bonding glue for FRP wet bonding method reinforcement to obtain the FRP reinforced damaged RC component, soaking the FRP reinforced damaged RC component in a constant-temperature salt solution for secondary accelerated corrosion, obtaining a test lap joint component, and researching and testing the FRP-concrete interface durability of the lap joint member. The sodium chloride solution is adopted to simulate the marine environment, the steel bars in the RC component are electrified in the sodium chloride solution to accelerate corrosion of the steel bars, the corrosion degree of the steel bars is controllable, and operability is high; and the FRP reinforced RC component is soaked in the sodium chloride solution for artificial secondary accelerated corrosion, so that the time can be saved and the cost can be reduced on the premise of ensuring that the test purpose is achieved.