Semiconductor silicon wafer corrosive liquid and corrosion method thereof

A technology for silicon wafers and semiconductors, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as fast corrosion speed and uneven corrosion on the surface of silicon wafers, and achieve the effects of low cost, easy control, and reduced damage

Inactive Publication Date: 2016-10-12
江苏佑风微电子有限公司
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the etching solution used for semiconductor silicon wafers is hydrofluoric acid solution at room temperature. Since hydrofluoric acid is a weak acid, the etching speed and etching depth of silicon and the cl

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0016] Example 1:

[0017] An etching solution for semiconductor silicon wafers is formed by mixing 65% nitric acid, 45% hydrofluoric acid and 95% glacial acetic acid in a volume ratio of 4:4:6.

[0018] The method for etching semiconductor silicon wafers with an etching solution is to place the semiconductor silicon wafers in a closed container containing an etching solution and perform etching under low temperature conditions, the low temperature being -12°C.

[0019] Inert gas nitrogen is introduced into the container. The flow rate is 1sccm.

[0020] After etching the semiconductor silicon wafer, the silicon wafer needs to be cleaned.

[0021] For cleaning, high-purity deionized water with a resistivity greater than 18MΩ*cm is used to perform flow cleaning on the etched silicon wafer until the surface of the silicon wafer is clean.

Example Embodiment

[0022] Example 2:

[0023] An etching solution for semiconductor silicon wafers is mixed with 70% nitric acid, 55% hydrofluoric acid and 99% glacial acetic acid in a volume ratio of 14:14:18.

[0024] The method for etching semiconductor silicon wafers with an etching solution is to place the semiconductor silicon wafers in a closed container containing an etching solution and perform etching under low temperature conditions, the low temperature being -8°C.

[0025] Inert gas argon is passed into the container. The flow rate is 800sccm.

[0026] After etching the semiconductor silicon wafer, the silicon wafer needs to be cleaned.

[0027] For cleaning, high-purity deionized water with a resistivity greater than 18MΩ*cm is used to perform flow cleaning on the etched silicon wafer until the surface of the silicon wafer is clean.

Example Embodiment

[0028] Example 3:

[0029] An etching solution for semiconductor silicon wafers is made by mixing 66% nitric acid, 48% hydrofluoric acid and 97% glacial acetic acid in a volume ratio of 6:6:8.

[0030] The method for etching semiconductor silicon wafers with an etching solution is to place the semiconductor silicon wafers in a closed container containing an etching solution and perform etching under low temperature conditions, the low temperature being -10°C.

[0031] Inert gas helium is introduced into the container. The flow rate is 500sccm.

[0032] After etching the semiconductor silicon wafer, the silicon wafer needs to be cleaned.

[0033] For cleaning, high-purity deionized water with a resistivity greater than 18MΩ*cm is used to perform flow cleaning on the etched silicon wafer until the surface of the silicon wafer is clean.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of microelectronic processing and especially to a semiconductor silicon wafer corrosive liquid. The semiconductor silicon wafer corrosive liquid is formed by mixing nitric acid, hydrofluoric acid, and glacial acetic acid according to a volume ratio of 4-14: 4-14: 6-18. A semiconductor silicon wafer is placed in a closed container containing the semiconductor silicon wafer corrosive liquid in order to be corroded on a low-temperature condition. Different corrosion demands are satisfied by regulating the ratio of the nitric acid to the hydrofluoric acid. The corrosion rate and the corrosion depth of the semiconductor silicon wafer, and the surface cleanliness of the corroded semiconductor silicon wafer can be controlled on the low-temperature condition. The corrosion rate at a low-temperature environment is less than that at a normal-temperature environment, so the corrosive uniformity of the semiconductor silicon wafer is easier to control. The semiconductor silicon wafer corrosive liquid is easy to form, attainable in raw material, low in cost, and very suitable for industrial production of semiconductor microelectronics.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a semiconductor silicon wafer etching solution and an etching method thereof. Background technique [0002] In the microelectronics processing technology, the semiconductor wafer manufacturing process generally includes the following steps: providing a wafer inverted garden obtained by cutting and slicing a single crystal block, mechanical polishing, etching, polishing and cleaning, and producing a wafer with high-precision flatness wafer. Wafers that have undergone mechanical treatments such as dicing, OD grinding, slicing, grinding, etc. have a damaged layer, that is, a process-damaged layer on one of its surfaces that causes slippage, dislocation, etc. during device fabrication Crystal defects reduce the mechanical strength of the wafer and adversely affect the electrical properties. Therefore, this layer must be completely removed. In order to remove the p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/67H01L21/306
CPCH01L21/67086H01L21/30604
Inventor 郏金鹏陈诚王平王峰张各海袁超张凌鹓
Owner 江苏佑风微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap