Coptis extract silicon slice texturing agent and preparation method thereof

A Coptis chinensis extract and velvet-making agent technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as large chemical consumption, low reaction controllability, and impact on product quality, and achieve product quality The effect of stable quality, improving the efficiency of cashmere making and reducing the production cost

Inactive Publication Date: 2015-12-02
安徽飞阳能源科技有限公司
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The isopropanol and other components used in the existing texturing liquid have large volatilization, poor environmental protection, short service life, large chemical consumption, low reaction controllability, and poor texturing repeatability, which directly affect product quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] Non-limiting examples of the present invention are as follows:

[0014] A kind of Coptidis Rhizoma extract liquid silicon chip texturizing agent, is prepared from the component raw material of following weight (kg):

[0015] Coptis 10, Sodium Hydroxide 2.5, Sodium Tripolyphosphate 5, Sodium Lauryl Sulfate 0.5, Sodium Lauryl Amphoacetate 0.5, Texturing Conditioner 10, Coconut Oil 0.5, Sodium Caseinate 1, Maltodextrin 0.5, water 150;

[0016] Wherein the texturizing regulator is made of the following component raw materials by weight (kg): styrene 3, methyl methacrylate 2, polyvinyl alcohol 2, cornstarch 1, potassium persulfate 0.1, flat plus 0.5, water 80; The preparation method of the texture regulator is to add polyvinyl alcohol and corn starch to 1 / 2 amount of water and stir at 60°C for 1 hour, then add Pingpingjia and stir for 5 minutes at 1000r / min, add styrene, methyl methacrylate and potassium persulfate Mix well and heat to 85°C to react for 0.5h, and finally a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a coptis extract silicon slice texturing agent. The coptis extract silicon slice texturing agent is characterized by being prepared from, by weight, 5-10 parts of coptis roots, 1.5-2.5 parts of sodium hydroxide, 3-5 parts of sodium tripolyphosphate, 0.3-0.5 part of lauryl sodium sulfate, 0.3-0.5 part of sodium lauroamphoacetate, 5-10 parts of texturing modifiers, 0.3-0.5 part of coconut oil, 0.5-1 part of sodium caseinate, 0.3-0.5 part of maltodextrin and 100-150 parts of water. By means of the silicon slice texturing agent, the texturing efficiency can be improved, the stability of the texturing technology can be improved, dosage of chemicals can be reduced, the silicon slice texturing agent is free of toxicity, harmless, green and environmentally friendly, the production cost is reduced, the transfer efficiency of a battery slice is effectively improved, good antibacterial and cleaning properties are achieved, and the product quality is stable.

Description

technical field [0001] The invention relates to silicon chip texturing technology, in particular to a silicon chip texturing agent of Coptidis Rhizoma extract and a preparation method thereof. Background technique [0002] Texturing is an important process in the production process of solar cells. Using the principle of anisotropic corrosion of single crystal silicon by low-concentration alkaline etching solution, a "pyramid" structure is formed on the surface of the silicon wafer to reduce the reflectivity of the silicon wafer surface and increase Absorb light, reduce reflectivity, and improve conversion efficiency of solar cells. At present, the conventional texturing process generally uses sodium hydroxide or potassium hydroxide, and adds a suitable mixed solution of isopropanol and sodium silicate for texturing. The isopropanol and other components used in the existing texturing liquid have large volatilization, poor environmental protection, short service life, large c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06
Inventor 王泽庆
Owner 安徽飞阳能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap