Alkaline type texturing process of monocrystalline silicon wafer

A single crystal silicon wafer, alkaline technology, applied in the field of solar cells, can solve the problems of inhomogeneous diffusion and difficult conductive paste, and achieve the effect of ensuring uniform diffusion, easier thickness control, and favorable coating.

Active Publication Date: 2014-02-12
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the structure size and arrangement of the suede surface obtained by the alkaline texturizing process in the prior art are random, and the secondary reflection cannot be well formed in an all-round way, and the diffusion cannot be uniformly diffused, and it is difficult to form a good contact with the conductive paste. In order to solve the problem of contact, a simple process step is provided, which is suitable for industrial production and has

Method used

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  • Alkaline type texturing process of monocrystalline silicon wafer
  • Alkaline type texturing process of monocrystalline silicon wafer
  • Alkaline type texturing process of monocrystalline silicon wafer

Examples

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Example Embodiment

[0037] Example 1

[0038] (A) De-damage layer: Place the monocrystalline silicon wafer 1 in a NaOH solution with a mass concentration of 12%, etch it at 100°C for 45s, then wash it with deionized water and dry it.

[0039] (B) Mask preparation: Put the single crystal silicon wafer 1 of the de-damaged layer into an oxidation furnace for oxidation, and form SiO with a thickness of 10 nm on the surface of the single crystal silicon wafer 1 2 Mask 2.

[0040] (C) Mask window: for the formation of SiO 2 The surface of the monocrystalline silicon wafer 1 of the mask 2 is opened by laser to make the SiO 2 Mask 2 is formed with evenly spaced apertures 3 (see figure 1 , figure 2 ), the opening interval is 8μm, and the aperture is 4μm.

[0041] (D) Surface texturing: Place the monocrystalline silicon wafer 1 after opening the window in a NaOH solution with a mass concentration of 25%, and etch it at 100°C for 60 minutes to form a suede surface with an inverted pyramid structure on the surface o...

Example Embodiment

[0044] Example 2

[0045] (A) De-damage layer: Place the monocrystalline silicon wafer 1 in a 16% NaOH solution, etch it at 70°C for 30s, then wash it with deionized water and dry it.

[0046] (B) Mask preparation: Put the single crystal silicon wafer 1 of the de-damaged layer into an oxidation furnace for oxidation, and form SiO with a thickness of 100 nm on the surface of the single crystal silicon wafer 1 2 Mask 2.

[0047] (C) Mask window: for the formation of SiO 2 The surface of single crystal silicon wafer 1 of mask 2 is opened by laser to make SiO 2 Mask 2 is formed with evenly spaced apertures 3 (see figure 1 , figure 2 ), the opening interval is 5m, and the hole diameter is 3m.

[0048] (D) Surface texturing: Place the monocrystalline silicon wafer 1 after opening the window in a solution with a mass concentration of 20NaOH and etch it at 80°C for 40 minutes to form a suede 4 with an inverted pyramid structure on the surface of the monocrystalline silicon wafer.

[0049] (E) ...

Example Embodiment

[0051] Example 3

[0052] (A) De-damage layer: Place the monocrystalline silicon wafer 1 in a NaOH solution with a mass concentration of 13%, etch it at 800°C for 50s, and then wash it with deionized water and dry it.

[0053] (B) Mask preparation: Put the single crystal silicon wafer 1 of the de-damaged layer into an oxidation furnace for oxidation, and form SiO with a thickness of 200 nm on the surface of the single crystal silicon wafer 1 2 Mask 2.

[0054] (C) Mask window: for the formation of SiO 2 The surface of single crystal silicon wafer 1 of mask 2 is opened by laser to make SiO 2 Mask 2 is formed with evenly spaced apertures 3 (see figure 1 , figure 2 ), the opening interval is 4μm, and the aperture is 2μm.

[0055] (D) Surface texturing: place the monocrystalline silicon wafer 1 after opening the window in a NaOH solution with a mass concentration of 18%, and etch it at 70°C for 20 minutes to form an inverted pyramid structure on the surface of the monocrystalline silicon ...

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Abstract

The invention discloses an alkaline type texturing process of monocrystalline silicon wafer, which is used for solving the problems that secondary reflection cannot be completely formed very well and good contact with conductive slurry is difficult to form due to uneven diffusion as size and arrangement of a textured surface obtained by the alkaline type texturing process in the prior art are random. The alkaline type texturing process mainly comprises the following steps: (a) removing an affected layer; (b) preparing a mask; (c) windowing the mask; (d) texturing on a surface; and (e) removing the mask. The alkaline type texturing process disclosed by the invention is simple in step, suitable for industrial production and low in cost; the obtained monocrystalline silicon wafer textured structure is an inverted pyramid structure with regular size and arrangement, so that secondary reflection can be completely formed very well; and meanwhile, diffusion is guaranteed to be uniform and coating of conductive slurry is facilitated, so that thickness of the conductive slurry is controlled easier, contact with the conductive slurry is good, metal sintering is facilitated, and contact resistance is reduced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an alkaline texturing process for single crystal silicon wafers. [0002] Background technique [0003] In the production of conventional solar monocrystalline silicon cells, the traditional alkaline texturing process is generally adopted, that is, through the reaction of the silicon wafer and the alkaline texturizing solution to form "pyramid"-shaped undulations on the surface of the silicon wafer, through the texture of these pyramid structures Surface to form secondary reflection, improve light absorption, reduce the reflectivity of the silicon wafer surface, thereby improving the conversion efficiency of the cell. [0004] For example, the Chinese patent with application publication number CN102703903A and application publication date of 2012.10.03 discloses an alkali texturing process, the main steps of which are as follows: first, silicon wafers are etched in an alkal...

Claims

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Application Information

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IPC IPC(8): C30B33/10H01L31/18C23F1/32C23F1/02
CPCY02P70/50
Inventor 韩健鹏吴敏
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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