Bottom electrode bottom-removing etching method of space three-junction gallium arsenide solar battery

Abstract

The invention relates to a bottom electrode bottom-removing etching method of a space three-junction gallium arsenide solar battery, comprising the following steps of: (1) spreading rubber and drying; (2) configuring main etching liquid and 201 etching liquid; (3) etching and washing wafers, wherein the etching time of the wafers which are put into the main etching liquid is 30-40s; (4) cleaning an organic solvent, wherein in the step (2), the peroxide, the hydrofluoric acid and the deionized water in the main etching liquid are in the volume proportion: of 1:1:8; washing the wafers 4-6 times by using the deionized water, then, putting the wafers into the 201 etching liquid to etch for 10-20s; and finally, taking the wafers out of the etching liquid and washing the wafers 6-10 times by using the deionized water. The invention has simple technology and scientific design, adopts a bottom electrode etching technology to increase the yield of bulk batteries, bottom electrode firmness of batteries and battery performance, and promotes the wide application of three-junction solar batteries in the field of new environment-friendly energy resources.

Description

technical field [0001] The invention belongs to the technical field of solar cell manufacturing, in particular to a method for removing the bottom electrode of a triple-junction gallium arsenide solar cell for space use. Background technique [0002] A solar cell is a semiconductor device that directly converts solar energy into electrical energy based on the photovoltaic effect. The triple-junction gallium arsenide solar cell for space is based on the gallium arsenide / germanium single-junction solar cell, adding a top cell (GaInP 2 ), while preparing a p / n junction in the germanium substrate. It uses metal organic chemical vapor deposition (MOCVD) technology to grow the cell structure on Ge substrates, and uses other corresponding semiconductor process technologies to prepare ohmic contacts and optical anti-reflection films. [0003] Epitaxy is the first step in the preparation of triple-junction solar cells, and the corresponding cell structure is grown on a Ge substrate...

AI Technical Summary

Problems solved by technology

[0007] The deficiencies in the existing methods are: (1) after a long period of corrosion, the surface morphology of the battery cannot be controlled, which directly affects the firmness of the next evaporation of the lower electrode; (2) the corrosion rate is not fixed, and the epitaxy cannot be guaranteed. There is no reverse Ge junction on the back surface of the sheet, resulting in a decrease in the output voltage of the battery and a decrease in the conversion efficiency of the battery