Unlock instant, AI-driven research and patent intelligence for your innovation.

Back reflector for photovoltaic devices

A technology of back reflection layer and thin film photovoltaic cell is applied in the fields of improved back reflection layer structure, thin film silicon-based photovoltaic device, and reinforced back reflection layer, and can solve the problems of mutual diffusion between silicon layer and aluminum layer.

Inactive Publication Date: 2013-02-13
XUNLIGHT CORPORATION
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when thin-film silicon material is deposited directly on the aluminum metal layer, interdiffusion between the silicon layer and the aluminum layer may occur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back reflector for photovoltaic devices
  • Back reflector for photovoltaic devices
  • Back reflector for photovoltaic devices

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0032] A back reflection layer 302 made on a stainless steel (SS) foil substrate 301 has such image 3 The structure shown comprises (i) a 300 nm thick first metal layer 303 with a textured aluminum layer having a randomly textured surface, the layer having a root mean square (RMS) surface roughness R of 240 nm rms , and a maximum peak-to-valley R of 480nm p-v (ii) a first barrier layer 304 of ZnO layer with a thickness of 30nm; (iii) a second metal layer 305 of highly reflective silver layer with a thickness of 50nm formed on the first barrier layer; (iv) a A second TCO barrier layer 306 of ZnO layer with a thickness of 650 nm is formed on the second metal layer. Figure 4 The total reflectance spectrum (curve 4a) and the diffuse reflectance spectrum (curve 4b) of a BR are shown, wherein the BR has the above structure SS / 300nm-Al / 30nm-ZnO / 50nm-Ag. Curve 4a shows a high total reflectance of 80% to 88% in the wavelength range of 500nm to 1000nm, while curve 4b shows a high di...

example 2

[0035] A back reflection layer 302 made on the SS foil substrate 301 has such image 3 The structure shown comprises: (i) a first metal layer 303 with a thickness of 300 nm with a textured aluminum layer having a textured surface with a randomly textured surface identical to the Al-layer in Example 1; (ii) a The first barrier layer 304 of ZnO layer, thickness is 30nm; (iii) the second metal layer 305 of a highly reflective silver layer, thickness is 100nm, and it is formed on the first barrier layer; (iv) the second metal layer 305 of a ZnO layer A TCO barrier layer 306, with a thickness of 650 nm, is formed on the second metal layer. Figure 6 The total reflectance spectrum (curve 6a) and the diffuse reflectance spectrum (curve 6b) of a BR are shown, wherein the BR has the above structure SS / 300nm-Al / 30nm-ZnO / 150nm-Ag. Curve 6a shows a very high total reflectance of 90% to 98% in the wavelength range of 500nm to 1000nm, while curve 6b shows a high diffuse reflectance of 88% ...

example 3

[0037] A back reflection layer 302 made on the SS foil substrate 301 has such image 3 The structure shown comprises: (i) a first metal layer 303 with a thickness of 300 nm with a textured aluminum layer having a textured surface with a randomly textured surface identical to the Al-layer in Example 1; (ii) a The first barrier layer 304 of ZnO layer, thickness is 30nm; (iii) the second metal layer 305 of a highly reflective silver layer, thickness is 200nm, and it is formed on the first barrier layer; (iv) the second metal layer 305 of a ZnO layer A TCO barrier layer 306, with a thickness of 650 nm, is formed on the second metal layer. Figure 7 The total reflectance spectrum (curve 7a) and the diffuse reflectance spectrum (curve 7b) of a BR having the above structure SS / 300nm-Al / 30nm-ZnO / 200nm-Ag are shown. Curve 7a shows an excellent total reflectance of 92% to 98% in the wavelength range of 500nm to 1000nm, while curve 7b shows a very high diffuse reflectance of 92% to 88% ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

This invention relates to an improved back reflector structure of multiple material layers for being used in thin-film photovoltaic devices. The invention provides an enhanced back reflector having a texture, a high reflectivity, a high yield, and a long lifetime stability which can be applied into thin-film silicon based photovoltaic devices. The back reflector structure consists of (i) a first textured metal or alloy layer, such as aluminum (Al), formed on a metal (such as stainless steel) or polymer (such as Kapton) substrate, (ii) a thin oxide or nitride first barrier layer such as zinc oxide (ZnO), formed on the first metal layer, (iii) a second reflective metal or alloy layer, such as silver (Ag), formed on the first barrier layer, (iv) a transparent oxide or nitride second barrier layer, such as zinc oxide, formed on the second metal layer.

Description

[0001] This application claims the benefit of Provisional Patent Application Serial No. 61 / 270,503, filed July 9, 2009. technical field [0002] The invention mainly relates to thin-film photovoltaic devices, in particular to an improved back reflection layer structure for multi-material layers of thin-film photovoltaic devices. More specifically, the present invention provides a reinforced back reflection layer, which has a suede texture and has high reflectivity, high yield and long-life stability, and can be applied to thin-film silicon-based photovoltaic devices. Background technique [0003] In recent years, thin-film photovoltaic devices have been in-depth research and development, which can be achieved by adding layers such as thin-film silicon-based a-Si, a-SiGe, nc-Si or μ-Si, CdS / CdTe and CdS / CulnSe 2 Layers, etc., of so-called thin-film semiconductor solar cell materials are formed on low-cost substrates such as glass, stainless steel, etc. to produce them. Typic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02N6/00
CPCY02E10/52H01L31/0527H01L31/03762H01L31/075H01L31/02366H01L31/03921Y02E10/548H01L31/206H01L31/056Y02P70/50
Inventor 曹新民
Owner XUNLIGHT CORPORATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com