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mosfet and its formation method

A channel and gate structure technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of low process yield and low MOSFET performance, and achieve the effect of high growth uniformity

Active Publication Date: 2015-12-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, the performance of MOSFETs formed by the existing process is low, and the process yield is low

Method used

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Embodiment Construction

[0028] It is known from the background technology that the performance of the stress MOSFET formed by the existing process is low, and the yield of the MOSFET formation method is low. Therefore, the inventor of the present invention has conducted a lot of research and found that the performance of the force MOSFET is low and the yield of the MOSFET formation method is low. The reason is that there are voids or voids in the stress layer 120 filled in the recessed area 110 and the tunnel 111, which makes the performance of the stress layer 120 (usually epitaxial SiGe or SiC) poor.

[0029] The inventor further researched and found that the reason for the voids or voids in the stress layer 120 is that the stress layer 120 needs to fill the recessed area 110 and the tunnel 111, and the stress layer 120 usually adopts an epitaxial process, and the epitaxial process is performed in the The deposition rate of the recessed area 110 is faster than the deposition rate of the tunnel 111, so ...

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Abstract

The invention relates to a metal-oxide-semiconductor field-effect transistor (MOSFET) and a forming method thereof. The MOSFET comprises a substrate, channels and a stress layer, a gate structure is arranged on the surface of the substrate; the channels are located on two sides of and at the bottom of the gate structure, and a ridge is arranged at the bottom of the channel corresponding to the gate structure; and the stress layer is filled in the channels. According to the MOSFET and the forming method thereof, no gap or cavity exists in the stress layer, and the forming method of the MOSFET is high in yield.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to MOSFET and its forming method. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve higher computing speeds, greater data storage capacity, and more functions, semiconductor devices are developing toward higher component density and higher integration. Therefore, MOSFET (Metal-Oxide-SemiconductorField-EffectTransistor, MOSFET) The gate becomes thinner and the length becomes shorter than ever. In order to obtain better electrical performance, it is usually necessary to control the carrier mobility to improve the performance of the semiconductor device. A key element of this technology is to control the stress in the transistor channel. For example, by properly controlling the stress and increasing the mobility of carriers (electrons in n-channel transistors, holes in p-channel transistors), the drive...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/10
Inventor 洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP