System and method for uniformly growing nitride single crystal by flux method

Abstract

The invention discloses a system and a method for uniformly growing nitride single crystals by a fluxing agent method. The system comprises fluxing agent method nitride single crystal growth equipment and further comprises an N plasma generator, wherein the N plasma generator is at least used for carrying out N plasma treatment on a seed crystal and / or a substrate needed by nitride single crystal growth so that defect sites can be generated on the surface of the seed crystal and / or the substrate; and / or providing N plasma as a nitrogen source required by growth of the nitride single crystal. According to the method for homogeneous growth of the nitride single crystal by the fluxing agent method for improving the solubility of the nitrogen source, the nitrogen plasma generator is adopted to generate the nitrogen plasma, then the nitrogen plasma is utilized to process the seed crystal / substrate, and the nitrogen plasma generator is utilized to generate the nitrogen plasma as the nitrogen source; therefore, the growth uniformity and the crystal growth quality of the nitride single crystal can be improved at the same time.

Description

technical field [0001] The invention relates to a method for a nitride single crystal by a flux method, in particular to a system and method for uniformly growing a nitride single crystal by a flux method, and belongs to the technical fields of electronic science and technology, semiconductor materials and devices, and flexible electronics . Background technique [0002] As one of the core materials of the third-generation semiconductors, gallium nitride has a large band gap, high electron mobility, high breakdown field strength, high thermal conductivity, small dielectric constant, strong radiation resistance, and good chemical stability. and other excellent characteristics. Gallium nitride is used in a wide range of optical devices and high-power electronic devices, such as light-emitting diodes (LEDs), laser diodes (LDs), and high-power transistors. At present, there are mainly four methods for producing GaN single crystal substrates, high-pressure melt method, hydride ...

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Problems solved by technology

[0004]Relevant personnel have found that during the growth process of gallium nitride bulk single crystal by flux method, due to the low solubility of nitrogen source, nitrogen vacancy defects are generated. In addition, literature It is reported that when the solubility of the nitrogen source is low (that is, in a nitrogen-poor environment), impurities such as oxygen impurities are also prone to occur, and the low solubility of the nitrogen source will also cause a decrease in raw material transportation efficiency and a decrease in the growth rate of GaN single crystals. Low cost, growth cycle and high growth cost

[0005] In order to overcome the problem of low solubility of nitrogen source, those skilled in the art generally adopt the mechanical structure stirring melt method to improve the homogenization of the melt, but the mechanical structure stirring melt The mechanical structure based on it is relatively complicated, and the stirrer is also easy to introduce new impurities and bubbles. At the same time, stirring is also easy to destroy the growth equilibrium conditions, resulting in disordered crystallization of gallium nitride, easy growth of polycrystals, etc., which are not conducive to the growth of gallium nitride single crystals. The new problem of crystal growth; the incorporation of more new impurities and bubbles in the stirring process also increases the probability of other defects, resulting in the problem of lower crystal growth quality.

Another method is to increase the solubility of the nitrogen source by increasing the nitrogen pressure, but this method will inevitably increase the difficulty of manufacturing equipment; in addition, the magnitude of increasing the solubility of the nitrogen source by adding metal Na as a flux is still limited, and it will also make The growth environment introduces more metallic sodium impurities, making it difficult to achieve the specified level of purity of the grown gallium nitride single crystal

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