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Solid-state image sensing device and electronic apparatus

A technology for solid-state imaging devices and electronic devices, which is applied to electric solid-state devices, semiconductor devices, televisions, etc., can solve problems such as image quality degradation, and achieve the effect of preventing image quality degradation.

Inactive Publication Date: 2013-03-06
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, resulting in color mixing and degraded image quality

Method used

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  • Solid-state image sensing device and electronic apparatus
  • Solid-state image sensing device and electronic apparatus
  • Solid-state image sensing device and electronic apparatus

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Embodiment Construction

[0034] Hereinafter, specific embodiments to which the present invention is applied will be described in detail with reference to the accompanying drawings.

[0035] figure 2 It is a block diagram showing an arrangement example of an embodiment of a solid-state imaging device to which the present invention is applied.

[0036] exist figure 2 Among them, the solid-state imaging device 21 has a pixel unit 22 , a vertical drive unit 23 , a column processing unit 24 , a horizontal drive unit 25 , an output unit 26 , a drive control unit 27 , and a shutter drive unit 28 .

[0037] The pixel unit 22 has a plurality of pixels 31 arranged in an array. Each pixel 31 is connected to the vertical drive unit 23 via a plurality of horizontal signal lines corresponding to the number of rows of each pixel 31 , and is connected to the column processing unit 24 via a plurality of vertical signal lines corresponding to the number of columns of each pixel 31 . In other words, the plurality o...

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Abstract

Provided are a solid-state image sensing device and an electronic apparatus. The solid-state image sensing device includes a light receiving layer and a shutter layer. The light receiving layer has a photoelectric conversion part arranged in a plane state and configured to convert received light into an electric signal. The shutter layer is configured to control transmission of the light to be incident on the light receiving layer. In the solid-state image sensing device, an interval between the light receiving layer and the shutter layer is less than or equal to a length of a shutter element formed in the shutter layer.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to and claims priority from Japanese Patent Application JP2011-184762 filed in the Japan Patent Office on Aug. 26, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a solid-state imaging device and an electronic device, and more particularly, to a solid-state imaging device and an electronic device capable of preventing degradation of image quality. Background technique [0004] In general, solid-state imaging devices such as CMOS (Complementary Metal Oxide Semiconductor) image sensors and CCD (Charge Coupled Device) image sensors are widely used in digital still cameras, digital video cameras, and the like. [0005] For example, a PD (Photodiode) serving as a photoelectric conversion portion of a pixel photoelectrically converts incident light incident on the CMOS image sensor. Subsequently,...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14625H01L27/14621H04N5/335H01L27/1464H01L27/14623
Inventor 山下和芳
Owner SONY CORP