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Memory and its formation

A memory and memory cell technology, applied in the field of memory, can solve the problems of cell operation, short channel, short channel effect, etc.

Active Publication Date: 2015-09-23
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The small size of some device elements may cause problems regarding the operation of the unit
For example, the channel between the source / drain regions becomes shorter, which can lead to severe short channel effects

Method used

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  • Memory and its formation
  • Memory and its formation
  • Memory and its formation

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Embodiment Construction

[0015] In the following detailed description, reference is made to the accompanying drawings that form a part of this document, and in which several specific embodiments are shown diagrammatically. In the drawings, similar numbers in all several views describe roughly similar components. Other embodiments can be utilized, and structural, logical, and electrical changes can be made without departing from the scope of the present invention. Therefore, the following detailed description should not be regarded as limiting, and the scope of the present invention is only defined by the appended claims and their equivalents. The term semiconductor can refer to, for example, a material layer, wafer or substrate, and includes any base semiconductor structure. "Semiconductor" should be understood to include silicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI) technology, thin film transistor (TFT) technology, doped and undoped semiconductors, epitaxial layers of silicon supp...

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Abstract

Memories and their formation are disclosed. One such memory has first and second memory cells at a first vertical level of the memory, first and second memory cells at a second vertical level of the memory, a first data line is selectively coupled to the first memory cells at the first and second vertical levels, and a second data line over the first data line is selectively coupled to the second memory cells at the first and second vertical levels.

Description

Technical field [0001] The present invention relates generally to memory, and in one or more embodiments in particular, the present invention relates to memory and its formation. Background technique [0002] The memory device is usually provided as an internal semiconductor integrated circuit in a computer or other electronic device. There are many different types of memory, including random access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), and flash memory. [0003] Flash memory devices have developed into a popular source of non-volatile memory for a wide range of electronic applications. Non-volatile memory is a memory that can retain its data value for a certain extended period without applying power. Flash memory devices generally use single transistor memory cells that allow high memory density, high reliability, and low power consumption. Through programming (sometimes called writing) of a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/18G11C16/02H01L27/115H10B69/00
CPCG11C16/0483H01L27/11578H01L27/11551H10B41/20H10B43/20
Inventor 山·D·唐尼尚特·辛哈
Owner MICRON TECH INC