Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process

Abstract

Provided is a method of fabricating a semiconductor device. The method includes forming a first dielectric layer over a first surface and a second surface of a silicon substrate. the first and second surfaces being opposite surfaces. A first portion of the first dielectric layer covers the first surface of the substrate, and a second portion of the first dielectric layer covers the second surface of the substrate. The method includes forming openings that extend into the substrate from the first surface. The method includes filling the openings with a second dielectric layer. The method includes removing the first portion of the first dielectric layer without removing the second portion of the first dielectric layer.

Description

technical field [0001] The present invention generally relates to the field of semiconductors, and more particularly to methods of manufacturing semiconductor devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development in recent years. Technological advances in IC materials and design have produced various types of ICs for different purposes. Fabrication of some types of ICs may require the formation of III-V layers over a substrate, eg, a III-V layer over a substrate. These types of IC devices may include, by way of example, light emitting diode (LED) devices, radio frequency (RF) devices, and high power semiconductor devices. [0003] Typically, manufacturers have formed III-V layers on top of the sapphire substrate. However, sapphire substrates are expensive. As a result, some manufacturers have begun to explore forming III-V layers on top of cheaper silicon substrates. However, existing methods of formi...

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Problems solved by technology

Outgassing of III-V layers may lead to contamination of silicon substrates

Therefore, existing fabrication processes may require the formation of a protective coating around the silicon substrate to prevent such contamination

The formation of the protective coating requires an additional manufacturing process, thus prolonging the manufacturing time and increasing the manufacturing cost

[0004] Thus, while existing methods of forming III-V layers on silicon substrates generally achieve their intended purpose, they are not completely satisfactory in every respect.

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