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Cleaning method after wet etching

A wet etching and wet removal technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of inability to completely remove silicon shavings, failure to meet product online inspection and shipment inspection requirements, and silicon shavings residue and other issues, to meet the high reliability and high radiation resistance performance, ensure reliability and radiation resistance performance, and reduce the effect of silicon shavings residue

Active Publication Date: 2017-12-08
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ability of the wet process to remove silicon shavings is weaker than that of the dry process, and it cannot completely remove the silicon shavings, which will cause the problem of silicon shavings remaining
In the subsequent process, the residual silicon shavings will be scattered to various parts of the silicon wafer, forming black spots visible to the naked eye, which cannot meet the requirements of product online inspection and shipment inspection
If silicon shavings are left on metal interconnects or package pads, they can cause reliability issues and packaging issues

Method used

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Embodiment Construction

[0023] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings of the specification. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention.

[0024] Refer to below image 3 A preferred embodiment of the cleaning method after wet etching according to the present invention is described.

[0025] Please refer to image 3 , The cleaning method after wet etching of the present invention includes the following steps:

[0026] Step 301: After the metal aluminum wet etching process is completed, perform the first wet removal of silicon residues.

[0027] Among them, the metal aluminum wet etching process is to wet etch the metal aluminum on the thin oxide layer. It should be noted that the thin o...

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Abstract

The invention discloses a cleaning method after wet etching to ensure that the surface of a silicon chip after wet etching meets the quality inspection requirements. The cleaning method comprises the following steps: performing the first wet method to remove residual silicon debris after completing the metal aluminum wet etching process; forming a photoresist on the wet-etched metal aluminum through a photolithography process; and performing photoresist baking. dry; perform a dry ashing of photoresist; and perform a second wet process to remove silicon shavings residue.

Description

Technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing technology, and relates to a method for cleaning metal aluminum after wet etching. Background technique [0002] With the continuous growth of integrated circuit integration, the feature size of integrated circuits continues to shrink, and the precision of integrated circuit production and processing is also increasing. The etching process that determines the final size of the device in the manufacturing process of integrated circuits becomes more and more important. Under the requirements of the continuous development of integrated circuits to small sizes, the dry etching process has good sidewall control capabilities, good feature size control capabilities, minimal photoresist shedding and adhesion problems, good uniformity and good The stability and controllability of the process has been widely used. However, because the wet etching process is isotropic chemical corro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 杨冰
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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