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Trench transistor

A technology of trenches and trenches, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reducing switching speed, increasing voltage capability with high breakdown voltage, increasing distance between drain and gate, etc.

Active Publication Date: 2015-07-08
GLOBALFOUNDRIES SINGAPORE PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, low Rds on resulting in high switching speeds, while high breakdown voltage increases voltage capability
[0003] Conventional techniques to achieve high breakdown voltages result in increased distance between drain and gate
However, the attendant will increase the Rds on , and unnecessarily slow down switching

Method used

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Examples

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Embodiment 1

[0012] Embodiments generally relate to semiconductor devices. Some embodiments relate to devices such as low power loss buck and boost regulators, power amplifiers, and power management circuits. For example, such a device can comprise a stand-alone device, or an integrated circuit (IC) such as a microcontroller or a system-on-a-chip (SoC). For example, the device or integrated circuit may contain or use electronics such as speakers, computers, cell phones, and personal digital assistants (PDAs).

[0013] Figure 1a is a cross-sectional view of an embodiment of the display device 100 . As shown, the cross-sectional view illustrates along the channel length L C installation. As shown, the device is formed in a device region 110 defined on a substrate 105 . For example, the substrate is a silicon substrate such as a semiconductor substrate. In one embodiment, the substrate can be a p-type doped substrate. For example, the p-type doped substrate is a lightly doped p-type su...

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PUM

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Abstract

A method of forming a device is disclosed. A substrate defined with a device region is provided. A buried doped region is formed in the substrate in the device region. A gate is formed in a trench in the substrate in the device region. A channel of the device is disposed on a sidewall of the trench. The buried doped region is disposed below the gate. A distance from the buried doped region to the channel is a drift length LD of the device. A surface doped region is formed adjacent to the gate.

Description

technical field [0001] The present invention relates to a transistor with fast switching speed and high breakdown voltage. Background technique [0002] Lateral Double-Diffused (LD) transistors have been widely used in high voltage applications. The performance of this laterally diffused transistor depends on the drain-source on-resistance (Rds on ) and the breakdown voltage (breakdown voltage). For example, low Rds on resulting in high switching speeds, while high breakdown voltage increases voltage capability. [0003] Conventional techniques to achieve a high breakdown voltage result in an increased distance between the drain and gate. However, the attendant will increase the Rds on , and unnecessarily slow down the switching speed. Contents of the invention [0004] The present invention discloses methods of forming devices. In one embodiment, the method includes providing a substrate defining a device region, the method also includes forming a buried doped regi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/78
CPCH01L29/66689H01L29/41775H01L29/7813H01L29/7825H01L29/41766H01L29/7827H01L29/1095H01L29/0882H01L29/66704H01L29/0653
Inventor S·马修P·R·维尔马
Owner GLOBALFOUNDRIES SINGAPORE PTE LTD