Unlock instant, AI-driven research and patent intelligence for your innovation.

Polysilicon resistance structure and corresponding semiconductor integrated device forming method

A technology of polysilicon resistors and integrated devices, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of low integration and many process steps, so as to save the consumption of raw materials and shorten the process Cycle time, the effect of saving production process cost

Active Publication Date: 2016-08-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the integration degree of the forming process is low, and there are many process steps

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polysilicon resistance structure and corresponding semiconductor integrated device forming method
  • Polysilicon resistance structure and corresponding semiconductor integrated device forming method
  • Polysilicon resistance structure and corresponding semiconductor integrated device forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] When the split-gate flash memory and the polysilicon resistor are formed using the existing process, the split-gate flash memory and the polysilicon resistor are manufactured separately, that is, after the split-gate flash memory is formed in a designated area, the split-gate flash memory A mask layer is formed on the surface, and then polysilicon resistors are formed in other areas. However, since the fabrication of the split-gate flash memory requires the deposition of multiple polysilicon layers to form control gates, floating gates or word lines, after the split-gate flash memory is formed, the multi-layer polysilicon layers in other regions are etched away, and then Forming another polysilicon layer to make polysilicon resistors results in a waste of material and an increase in process steps.

[0028] Therefore, an embodiment of the present invention provides a polysilicon resistance structure and a method for forming a semiconductor integrated device by simultaneo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed are a polycrystalline silicon resistance structure and a method for manufacturing a corresponding semiconductor integrated device. The method for manufacturing the semiconductor integrated device includes forming a control gate material layer on the surface of an isolation layer of a second region while forming a control gate material layer in a first region; and synchronously etching the control gate material layer of the second region while forming a split gate type flash memory so as to simultaneously form a control gate of the split gate type flash memory and the polycrystalline silicon resistance structure. The polycrystalline silicon resistance structure and the method have the advantages that extra processes are omitted, a process period is shortened, and consumed raw materials for depositing polycrystalline silicon and production and process costs are saved.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a polysilicon resistance structure and a corresponding semiconductor integrated device forming method. Background technique [0002] As the feature size (CD, Critical Dimension) of semiconductor devices becomes smaller and smaller, the integration of semiconductor chips is getting higher and higher, and the number and types of devices that need to be formed per unit area are also increasing, so the semiconductor The requirements for craftsmanship are also getting higher and higher. How to rationally arrange the positions of various devices, and how to save semiconductor process steps and materials by using the common points of each device manufacturing has become a hot research topic. [0003] In the manufacture of semiconductor devices, polysilicon is a very commonly used conductive material, which can usually be used to make gate electrodes of MOS transistors, high resistance polysi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L21/02H01L23/522
Inventor 江红
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP