Semiconductor storage device

Abstract

The invention provides a semiconductor storage device which can reduce probability of malfunction of the semiconductor storage device. A shielding layer is provided between a memory cell array (e.g., a memory cell array including a transistor formed using an oxide semiconductor material) and a peripheral circuit (e.g., a peripheral circuit including a transistor formed using a semiconductor substrate), which are stacked. With this structure, the memory cell array and the peripheral circuit can be shielded from radiation noise generated between the memory cell array and the peripheral circuit. Thus, probability of malfunction of the semiconductor storage device can be reduced.

Description

technical field [0001] The present invention relates to a semiconductor memory device. Background technique [0002] In recent years, metal oxides exhibiting semiconductor properties (hereinafter also referred to as oxide semiconductor materials) have attracted attention as materials for active layers of transistors. A transistor using an oxide semiconductor material as the material of the active layer can be manufactured by the same process as a transistor using amorphous silicon as the material of the active layer, and the mobility ratio of the transistor using the oxide semiconductor material as the material of the active layer is taken as the activity The material of the layer is higher than that of amorphous silicon transistors. Therefore, a transistor using an oxide semiconductor material as an active layer material is expected to replace or exceed a transistor using amorphous silicon as a material for an active layer. For example, a transistor to which an oxide semi...

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Problems solved by technology

[0011] However, when the memory cell array and peripheral circuits are arranged in layers, the possibility of radiated noise between the memory cell array and peripheral circuits increases.

As a result, the possibility of failure due to radiation noise increases when reading data in DRAM

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