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Static random access memory (SRAM) unit and manufacturing method thereof

A technology of semiconductors and fins, applied in the field of static random access memory cells and their fabrication, can solve problems such as changing the height of fins

Active Publication Date: 2013-04-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is currently no means to effectively vary the height of the fins

Method used

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  • Static random access memory (SRAM) unit and manufacturing method thereof
  • Static random access memory (SRAM) unit and manufacturing method thereof
  • Static random access memory (SRAM) unit and manufacturing method thereof

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Embodiment Construction

[0016] Hereinafter, the present invention is described by means of specific embodiments shown in the drawings. It should be understood, however, that these descriptions are exemplary only and are not intended to limit the scope of the present invention. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present invention.

[0017] A schematic diagram of a layer structure according to an embodiment of the invention is shown in the drawing. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, sizes, and relative positions can be...

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Abstract

The invention discloses a static random access memory (SRAM) unit and a manufacturing method thereof. The SRAM unit comprises a substrate and a first fin type field effect transistor (FinFET) and a second FinFET which are formed on the semiconductor layer, wherein the first FinFET comprises a first fin formed by connecting to a semiconductor layer arranged on the substrate; the second FinFET comprises a second fin formed by connecting to the semiconductor layer; the semiconductor layer comprises a plurality of semiconductor sublayers; and the first fin and the second fin respectively comprise different numbers of semiconductor sublayers and have different heights.

Description

technical field [0001] The present invention relates to the field of semiconductors, and more particularly, to a Static Random Access Memory (SRAM) unit and a manufacturing method thereof, wherein the SRAM unit includes Fin Field Effect Transistors (FinFETs) with different fin heights. Background technique [0002] Compared with conventional transistors, Fin Field Effect Transistors (FinFETs) are increasingly used due to their faster switching speed, higher current density, and better suppression of short-channel effects. In a typical FinFET, the channel is provided in a semiconductor fin (fin). Fins generally comprise single crystal semiconductor material having a substantially rectangular cross-section. The height of the fins is usually greater than the width of the fins to achieve higher conduction current per unit area. [0003] Although FinFETs offer improved performance over conventional metal oxide semiconductor field effect transistors (MOSFETs), they also present ...

Claims

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Application Information

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IPC IPC(8): H01L27/11H01L21/8244
CPCH01L21/823431H10B10/12
Inventor 朱慧珑梁擎擎
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI