Method for preparing intermediate and long infrared undercut type optical waveguides based on silicon on insulator (SOI) materials

Abstract

The invention discloses a method for preparing intermediate and long infrared undercut type optical waveguides based on silicon on insulator (SOI) materials. A row of square holes are formed in two sides of a ridge waveguide on an SOI piece, parallel to the ridge waveguide, and distributed at intervals. A high-loss oxygen buried layer under the ridge waveguide is hollowed out through the square holes so that an intermediate and long infrared undercut type ridge waveguide structure is achieved. Or slots are etched at the center of the ridge waveguide on the SOI piece, and a high-loss oxygen buried layer under the slot type waveguide is hollowed out trough the slots so that an intermediate and long infrared undercut type slot waveguide structure is achieved. Two manufactured waveguide structures through the method have low transmission loss, and a light field of the undercut type slot waveguide is mainly limited in the slots with a low refractive index. If chemical materials which can absorb existing characteristics of intermediate and long infrared bands are filled in the slots, an intermediate and long infrared absorption type sensor can be formed.

Description

technical field [0001] The invention relates to a method for preparing a medium-long infrared low-loss optical waveguide, in particular to a method for preparing a medium-long infrared undercut optical waveguide based on an SOI material. Background technique [0002] Since the new century, the IT industry represented by the Internet and the new generation of mobile communication technology has greatly promoted the research and development of integrated optoelectronic devices, and its own development has also promoted their application scope, gradually expanding from the communication field to the industrial , military, energy, medical, biological, sensing and other fields. In particular, silicon-based optoelectronic devices combined with the current mature CMOS technology create the possibility of low-cost, large-scale functionalization and modularization. [0003] So far, the research on integrated optics has mainly focused on the near-infrared band, mainly at 1.55 μm. How...

AI Technical Summary

Problems solved by technology

In the entire medium and long infrared band (except 2.9-3.6μm), the loss of silica is very high

Therefore, when the wavelength is greater than 3.6 μm, the SOI waveguide buried oxide layer will introduce a large absorption loss

At the same time, in the mid-to-long infrared band, the oxide layer as a confinement layer in the near-infrared band cannot confine the light field very well, and mode leakage will occur, which will also introduce a large transmission loss.

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