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Compound semiconductor device and method for fabricating the same

A semiconductor and compound technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of the most difficult p-type GaN structure, the GaN manufacturing technology is not as developed and optimized as the Si manufacturing technology, etc.

Active Publication Date: 2013-04-10
TRANSPHORM JAPAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the manufacturing technology of GaN is not as developed as that of Si, which has a long technology history
Therefore, it is difficult to optimize the p-type GaN structure

Method used

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  • Compound semiconductor device and method for fabricating the same
  • Compound semiconductor device and method for fabricating the same
  • Compound semiconductor device and method for fabricating the same

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no. 1 approach

[0034] In the first embodiment, an AlGaN / GaN HEMT as a compound semiconductor device is disclosed.

[0035] 1 and 3 are schematic cross-sectional views showing step by step a method for manufacturing an AlGaN / GaN HEMT according to a first embodiment.

[0036] Such as Figure 1A As shown, firstly, a compound semiconductor multilayer structure 2 is formed on a growth substrate (for example, a Si substrate 1). The growth substrate can also be other materials such as sapphire substrate, GaAs substrate, SiC substrate or GaN substrate instead of Si substrate. The substrate may be a semi-insulating substrate or a conductive substrate.

[0037] The compound semiconductor multilayer structure 2 includes a buffer layer 2a, an electron transport layer 2b, an intermediate layer (spacer layer) 2c, an electron supply layer 2d, a p-type cladding layer 2e, and an n-type cladding layer 2f. Here, as will be described later, the electron transport layer 2b has negative polarity so that a two-...

no. 2 approach

[0091] In the second embodiment, an AlGaN / GaN high electron mobility diode (hereinafter, simply referred to as an AlGaN / GaN diode) will be disclosed as a compound semiconductor device.

[0092] 10 to 12 are schematic cross-sectional views showing step by step a method for manufacturing the AlGaN / GaN diode according to the second embodiment.

[0093] Such as Figure 10A As shown, first, a compound semiconductor multilayer structure 21 is formed on a growth substrate (for example, Si substrate 1). The growth substrate can be other materials such as sapphire substrate, GaAs substrate, SiC substrate or GaN substrate. The substrate may be a semi-insulating substrate or a conductive substrate.

[0094] The compound semiconductor multilayer structure 21 includes a buffer layer 21a, an electron transport layer 21b, an intermediate layer (spacer layer) 21c, an electron supply layer 21d, a p-type cladding layer 21e, and an n-type cladding layer 21f.

[0095] Specifically, the followi...

no. 3 approach

[0138] In a third embodiment, a power factor correction (PFC) circuit comprising an AlGaN / GaN HEMT according to the first embodiment and / or an AlGaN / GaN according to the second embodiment will be disclosed.

[0139] Figure 17 is the connection diagram of the PFC circuit.

[0140] The PFC circuit 30 includes a switching element (transistor) 31 , a diode 32 , a choke coil 33 , capacitors 34 , 35 , a diode bridge 36 , and an alternating current power supply (AC) 37 . The AlGaN / GaN HEMT according to the first embodiment is applied to the switching element 31 . Alternatively, the AlGaN / GaN diode according to the second embodiment is applied to the diode 32 . Alternatively, an AlGaN / GaN HEMT according to the first embodiment is applied to the switching element 31 and an AlGaN / GaN diode according to the second embodiment is applied to the diode 32 . The AlGaN / GaN diode according to the second embodiment can also be applied to the diode bridge 36 .

[0141] In the PFC circuit 30,...

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Abstract

A compound semiconductor device includes an electron transit layer having a first polarity, a p-type cap layer which is formed above the electron transit layer and has a second polarity, and an n-type cap layer which is formed on the p-type cap layer and has the first polarity. The n-type cap layer includes portions having different thicknesses.

Description

technical field [0001] The present embodiment relates to a compound semiconductor device and its manufacturing method. Background technique [0002] Nitride semiconductors have a high saturation electron velocity and a wide band gap. Taking advantage of these and other features, application of nitride semiconductors to high withstand voltage and high output semiconductor devices has been studied. For example, GaN, which is a nitride semiconductor, has a band gap of 3.4 eV larger than that of Si (1.1 eV) and GaAs (1.4 eV), and has a higher breakdown field strength. For this reason, GaN has great potential as a material for power semiconductor devices that provide high-voltage operation and high output. [0003] As for nitride semiconductor-based devices, many reports have been made on nitride semiconductor-based field effect transistors, particularly high electron mobility transistors (HEMTs). For example, reports on GaN-based HEMTs (GaN-HEMTs) focus on AlGaN / GaN HEMTs tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335H01L29/861H01L21/329
CPCH01L23/4824H01L23/49562H01L29/41725H01L29/42316H01L29/66462H01L29/7787H01L29/2003H01L2224/0603H01L2224/32245H01L2224/48247H01L2224/48257H01L2224/48472H01L2224/4903H01L2224/73265H01L2224/45124H01L2924/12032H01L2224/05553H01L2224/05554H01L2924/181H01L2924/00H01L2924/00012H01L29/778H01L21/18
Inventor 今田忠纮
Owner TRANSPHORM JAPAN
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