Second-order memristor with multi-resistance state characteristic and modulation method thereof

Abstract

The invention discloses a second-order memristor with a multi-resistance state characteristic. Device units of the memristor comprise an upper electrode, a lower electrode and a functional material layer which is positioned between the upper electrode and the lower electrode, wherein the functional material layer is prepared from a sulfur compound with a molecular formula structure of Ge2Sb2Te5, Sb2Te3 or GeTe; and at least one of the upper electrode and the lower electrode is prepared from Ag or Cu. The invention also discloses a corresponding modulation method. According to the second-order memristor and the modulation method, the second-order memristor which has a plurality of internal state variables for producing multiple memristive effects can be obtained; and meanwhile, the second-order memristor has the advantages of simple structure, capability of realizing nano-scale size, easiness in preparation and the like.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, and more specifically relates to a second-order memristor with multi-resistance characteristics and a modulation method thereof. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley first predicted the fourth passive circuit element besides resistors, capacitors, and inductors—memristor. Its basic feature is the ability to memorize the charge flowing through it and respond it with changes in resistance. Due to the advantages of small size, low power consumption, high speed, and non-volatility, memristors have become important candidates for next-generation non-volatile memories. In addition, the circuit characteristics, nonlinear resistive behavior, and charge memory of memristors have made memristors widely used in many fields such as materials, electronics, biology, chemistry, and computers. One of the hot spots of research. [0003] S...

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Problems solved by technology

[0004] However, for these memristor devices in the prior art, they are all single-order memristors, that is, there is only one internal state variable, including electron spin polarization direction, electron barrier height, etc.

This type of single-stage memristor either only uses the movement of metal ions to generate the memristive effect, or only uses the crystal phase change of the material to generate the memristive effect, and lacks two-stage or multi-stage memristors that can realize the above two memristive processes at the same time. memristor device

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