Solar cell chip and manufacturing method thereof

A solar cell and chip technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as increasing the contact resistance between electrodes and semiconductor layers, limiting the contact area between electrodes and semiconductor layers, shortening the circulation distance, and improving sunlight utilization rate, improve the effect of conductivity

Active Publication Date: 2013-05-01
TIANJIN SANAN OPTOELECTRONICS
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional solar cells usually use a grid electrode structure, and the electrode grid lines form ohmic contact with the semiconductor layer. In order to maximize the use of sunlight, the total area of ​​the grid electrode accounts for only a small part of the total area of ​​the battery chip (less than 10%) ), which greatly limits the contact area between the electrode and the semiconductor layer, thereby increasing the contact resistance between the electrode and the semiconductor layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell chip and manufacturing method thereof
  • Solar cell chip and manufacturing method thereof
  • Solar cell chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The following embodiments disclose a high-power concentrating solar cell chip and its manufacturing method. It uses transparent conductive materials to form ohmic contact with the battery semiconductor layer in a large area. Specifically, a grid-shaped metal nanometer is formed on the surface of the battery semiconductor layer Electrodes, and then cover the transparent conductive layer, so that the metal nano-electrodes are embedded in the transparent conductive layer, which greatly improves the conductivity of the conductive layer.

[0032] The following will be further described in conjunction with the implementation of the present invention, but the protection scope of the present invention should not be limited thereby.

[0033] Such as figure 1 and figure 2 As shown, a high-power concentrated solar cell epitaxial wafer 001 is provided. Taking the GaInP / GaAs / Ge triple-junction solar cell as an example, the epitaxial layer of the GaInP / GaAs / Ge triple-junction cell...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a high-power light-gathering solar cell chip, which comprises a solar cell epitaxial overlay, latticed metal nano-electrodes, grid electrodes and a transparent conducting layer, wherein the latticed metal nano-electrodes cover on the surface of the solar cell epitaxial overlay; the grid electrodes are formed on the latticed metal nano-electrodes; and the transparent conducting layer is formed on the latticed metal nano-electrodes, and is in ohmic contact with the solar cell epitaxial overlay. The transparent conducting layer is in ohmic contact with the surface of the solar cell epitaxial overlay on a large area, so that the contact resistance of the electrodes and a cell epitaxial sheet is reduced greatly; the latticed metal nano-electrodes are embedded into the transparent conducting layer, so that the conducting capability of the transparent conducting layer is increased greatly, and the problem of insufficient conducting capability of the transparent conducting layer under a high-power light-gathering condition is solved; and the electrical conductivity of the transparent conducting layer is increased, so that the grid electrodes can be designed with larger distances, and the utilization ratio of sunlight is increased.

Description

technical field [0001] The invention relates to a high-power concentrating solar cell chip and a manufacturing method thereof, belonging to the field of semiconductor optoelectronic devices and technologies. Background technique [0002] Solar cell power generation is an important part of the new energy field in the future. However, the cost of solar cell power generation is still relatively high at present. To reduce the cost, the most direct and effective way is to improve the photoelectric conversion efficiency of solar cells. There are many factors affecting the photoelectric conversion efficiency of solar cells, among which the power loss of the internal series resistance of the cell is one of the most important factors. [0003] Among the components of the internal series resistance of the solar cell, the contact resistance between the light-receiving surface electrode and the semiconductor layer of the cell is an important component. Traditional solar cells usually u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/18H01L31/0224H01L31/022433Y02E10/50
Inventor 熊伟平林志东蔡文必林桂江吴志敏宋明辉安晖
Owner TIANJIN SANAN OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products