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A double-pin junction double-sided solar cell with an n-type silicon substrate

A technology of solar cells and silicon substrates, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems affecting the life of cells, reduce repeated pollution, and improve photovoltaic efficiency

Active Publication Date: 2016-01-20
ZHEJIANG JINBEST ENERGY SECIENCE & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because the formation of crystals is formed at high temperature, the doped film can be at high temperature or sub-high temperature, and the quality of CVD at medium temperature will affect the life of the entire cell

Method used

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  • A double-pin junction double-sided solar cell with an n-type silicon substrate
  • A double-pin junction double-sided solar cell with an n-type silicon substrate

Examples

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Embodiment Construction

[0011] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but not as a basis for limiting the present invention.

[0012] Example.

[0013] A double PIN junction double-sided solar cell with an N-type silicon substrate, such as figure 1 As shown, including the N-type silicon substrate N(Si), the upper and lower surfaces of the N-type silicon substrate are all made of textured surfaces 6, and the upper surface of the N-type silicon substrate is sequentially doped with high-temperature boron diffusion from bottom to top on the textured surface. Dopant deposition isolation layer I (SiO 2 ), P-type doped layer, isolation layer I and P + N-type doped layer four-layer structure; the uppermost layer uses PECVD technology to realize the SiN anti-reflection film 5; among them, the preparation of the buried electrode 2 and the output electrode should be carried out at the end (screen printing technology such as the uppe...

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Abstract

The invention discloses a double-PIN junction double-sided solar cell with an N-type silicon substrate. The double-PIN junction double-sided solar cell comprises the N-type silicon substrate, wherein the upper surface and the lower surface of the N-type silicon substrate are manufactured into textured faces; the textured face on the upper surface of the N-type silicon substrate is subjected to high temperature boron diffusion, doping and deposition from bottom to top to sequentially form an isolation layer I (SiO2), a P-type doped layer, an isolation layer I and a P<+> type doped layer which form a four-layer structure; the uppermost layer is processed by using a PECVD (plasma enhanced chemical vapor deposition) technology to form an SiN antireflection film; a buried electrode and an output electrode are prepared at last (by using a silk screen printing technology for top electrodes and the like); and the textured face on the lower surface of the N-type silicon substrate is subjected to sub-high temperature phosphorus diffusion and doping on the back surface from top to bottom to sequentially form an isolation layer I (SiO2) and an N<+> doped layer which form an NIN<+> structure.

Description

technical field [0001] The invention relates to a double-sided solar cell, in particular to a double-PIN junction double-sided solar cell with an N-type silicon substrate. Background technique [0002] Under the energy crisis, the photovoltaic industry has developed rapidly. The development of photovoltaic theory and technology is gradually becoming mature, and the key to further promoting photovoltaic applications is to improve the photoelectric conversion efficiency of batteries and reduce battery costs. HIT (physically speaking, PIN junction) batteries on Si substrates have been vigorously developed in Sanyo Corporation of Japan. It is a "heterojunction" (HIT junction) battery in which a thin layer of amorphous Si is grown on crystalline Si. The process temperature is actually a medium temperature process. Although the conversion efficiency is slightly stronger, the life is short. Working under sunlight, it is one of the low-cost and high-efficiency batteries suitable f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/076H01L31/077
CPCY02E10/547Y02E10/548
Inventor 韩元杰李新富吴鹏飞张冰余上新
Owner ZHEJIANG JINBEST ENERGY SECIENCE & TECH