Etching and roasting equipment

Abstract

The invention provides etching and roasting equipment. The etching and roasting equipment comprises a reaction cavity and a heating component, wherein the reaction cavity is used for containing a graphite plate or an epitaxial substrate slice needing to be cleaned, and the heating component is arranged on the outer side of the reaction cavity and can be operated to increase the temperature inside the reaction cavity; and the etching and roasting equipment also comprises the circulating air cooling system which comprises an air blower, a top pneumatic trough, a bottom pneumatic trough, an air cavity and a heat exchanger, wherein the air blower enables air currents to circulate, the top pneumatic trough is arranged above the reaction cavity, the bottom pneumatic trough is arranged below the reaction cavity, the air cavity is communicated between the top pneumatic trough and the bottom pneumatic trough and is arranged on the periphery of the reaction cavity, air currents in the air cavity are introduced for cooling the heating component, and the heat exchanger is connected to the downstream of the bottom pneumatic trough through a circulation air channel. The normal heating and use of the etching and roasting equipment provided by the invention can be ensured as related heating and heated parts inside an air flue of a reaction cavity body can be cooled.

Description

technical field [0001] The invention relates to an etching and baking equipment, in particular to a chlorine gas etching and baking equipment with an air cooling system. Background technique [0002] Metal-organic chemical vapor deposition equipment (MOCVD for short) conducts chemical deposition reactions on substrates in the form of thermal decomposition reactions, and grows thin-layer single-crystal materials of various III-V, II-VI compound semiconductors and their multiple solid solutions. Graphite disc is used as the supporting platform of the substrate. During the reaction process, excess chemical reaction residues will be deposited on the surface of the graphite disc. If it is not removed, it will inevitably affect the corresponding temperature during the growth process of a new batch of epitaxial wafers. Control, surface particles, etc., and ultimately affect the yield of epitaxial wafer growth. [0003] At present, there is no special equipment for etching and clea...

AI Technical Summary

Problems solved by technology

[0002] Metal-organic chemical vapor deposition equipment (MOCVD for short) conducts chemical deposition reactions on substrates in the form of thermal decomposition reactions, and grows thin-layer single-crystal materials of various III-V, II-VI compound semiconductors and their multiple solid solutions. Graphite disc is used as the supporting platform of the substrate. During the reaction process, excess chemical reaction residues will be deposited on the surface of the graphite disc. If it is not removed, it will inevitably affect the corresponding temperature during the growth process of a new batch of epitaxial wafers. Control, surface particles, etc., and ultimately affect the yield of epitaxial wafer growth

[0003] At present, there is no special equipment for etching and cleaning MOCVD and epitaxial wafers on the market. The current cleaning method for graphite disks used in the industry usually uses a vacuum sintering furnace for long-term high-temperature baking, and there is a comparison of the baking time of a single furnace. Long time (about 14 hours for a single furnace), the baking temperature is too high (the highest temperature is about 1400 degrees), which affects the life of the graphite disk cycle, and it is impossible to etch the scrapped epitaxial substrate produced during the process of growth

In addition, this type of equipment is relatively large in size and occupies a relatively large installation and use space in the purification workshop.

Images