Compatible probe card capable of being used in high temperature test and low temperature test

Abstract

The invention relates to a compatible probe card capable of being used in a high temperature test and a low temperature test. The compatible probe card comprises a substrate, a base seat and a probe. The base seat is fixed on the substrate, the probe is fixed on the base seat, one end of the probe is communicated with a circuit on the substrate, and the other end of the probe contacts with a wafer. A cooling device is further arranged on the substrate. The cooling device comprises a shell body. An air inlet and an air outlet are formed in the shell body. The air inlet is connected to a cool air source and the air outlet corresponds to the positions of the base seat and the probe. Due to the fact that the cooling device is arranged on the substrate, when the high temperature test is implemented, cool air flows in from the air inlet to cool the base seat and the probe, and when the low temperature test is implemented, the cool air source is switched off, and the test is implemented normally. Therefore, compatibility of the high temperature test and the low temperature test is realized, and smooth running of a wafer test is guaranteed.

Description

Technical field [0001] The invention relates to the field of wafer testing, in particular to a probe card compatible with high and low temperature testing. Background technique [0002] The structure of the probe card currently in use is as follows figure 1 As shown, it includes a substrate 1, a base 2 and a probe 3. The base 2 is fixed on the base 1, the probe 3 is fixed on the base 2, and one end of the probe 3 is connected to the circuit in the base 1 The other end is in contact with the surface of the wafer (not shown in the figure) to achieve various test purposes. However, in the high temperature test process, the high temperature is transmitted to the probe 3. The material of the probe 3 is generally rhenium tungsten, rhenium The melting point of tungsten is very high, and the deformation becomes stable after a certain thermal expansion time. However, the base 2 of the fixed probe 3 will be gradually deformed due to high temperature baking for a long time, causing the prob...

AI Technical Summary

Problems solved by technology

[0002] The structure of the currently used probe card is as follows: figure 1 As shown, it includes a substrate 1, a base 2 and a probe 3, the base 2 is fixed on the substrate 1, the probe 3 is fixed on the base 2, and one end of the probe 3 is connected to the circuit in the substrate 1 The other end is in contact with the surface of the wafer (not shown in the figure) to achieve various test purposes, but during the high temperature test, the high temperature is transmitted to the probe 3, and the material of the probe 3 is generally rhenium tungsten, rhenium The melting point of tungsten is very high, and the deformation becomes stable after a certain thermal expansion time, but the base 2 on which the probe 3 is fixed will gradually deform due to being baked at high temperature for a long time, causing the position of the probe 3 to change, which is different from the crystal The circle is out of contact and cannot meet the test requirements

[0003] Therefore, the current practice is to divide it into low-temperature and...

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