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Photo-etching parameter correction method and system thereof

A lithography parameter and lithography machine technology, which is applied in the field of lithography parameter correction method and system, can solve the problems of delayed product delivery, reduced lithography machine utilization rate, improved photoresist rework rate, etc., saving manpower and material waste, reducing photoresist rework problems, and reducing photoresist rework rates

Active Publication Date: 2015-04-08
CSMC TECH FAB2 CO LTD
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  • Description
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  • Application Information

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Problems solved by technology

However, the current lithography machine has completed batches of products that are transported by multiple other process machines. Due to the large differences between the multiple other process machines, the product differences are large after the corresponding processes are completed, and the products will be processed again. During photolithography, there will be a large deviation in the yellow light parameters, and the difference in product data after photolithography is also large, so that the correction value obtained by the RTR control system based on the data of the completed batch of products has a large error, and cannot accurately calculate the current and In the future, batches of products will be corrected, making the product correction inaccurate, causing a large number of photoresist rework problems, greatly increasing the photoresist rework rate, consuming a lot of manpower and material waste, delaying product shipment time, and reducing the cost of photolithography machines. Utilization of

Method used

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  • Photo-etching parameter correction method and system thereof
  • Photo-etching parameter correction method and system thereof

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Embodiment Construction

[0027] The specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] figure 1 It is a flow chart of a method for modifying lithography parameters in an embodiment, the method comprising:

[0029] S10: Multiple machines transport the products to the photolithography machine for processing.

[0030] The products required by the lithography machine are transported by multiple machines for other processes, and each machine transports the product to the lithography machine for lithography processing after completing its own process.

[0031] S20: Collect the data of the products conveyed by each machine from the batches of products processed by the photolithography machine.

[0032] Due to the differences in each machine, in order to ensure the accuracy of the correction value, it is necessary to collect the parameters of the products conveyed by each machine for each of the multiple machines...

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Abstract

The invention relates to a photo-etching parameter correction method and a system thereof. The method comprises the following steps: conveying products to a photo-etching machine by a plurality of boards, and processing; respectively collecting the data of the batch products conveyed by all the boards and processed by the photo-etching machine; respectively acquiring the correction values corresponding to all the boards according to the collected data of the products conveyed by the boards, wherein the correction value corresponding to one board is acquired only according to the data of the products conveyed by the board; and endowing the correction values corresponding to the boards to the photo-etching machine according to the boards corresponding to the current batch products of the photo-etching machine, correcting the photo-etching parameters, and processing the current batch products by the photo-etching machine after the correction. The accurate correction values are acquired to accurately correct the current and later batch products in order to reduce a photo-resistive reworking problem, so the photo-resistive reworking rate is substantially reduced, the batch stability of products is guaranteed, large amounts of manpower and materials are saved, the product completion time is guaranteed, and the utilization rate of the photo-etching machine is improved.

Description

【Technical field】 [0001] The invention relates to a semiconductor manufacturing method and system, in particular to a photolithography parameter correction method and system. 【Background technique】 [0002] At present, when photolithography is performed on semiconductor products, multiple machines that perform other processes will send multiple batches of products to the photolithography machine for photolithography after completing the corresponding processes. During photolithography, in order to maintain the stability between batches of products, most of them use RTR (RUN-TO-RUN) control system to correct the yellow light parameters for photolithography to ensure the stability between batches of products. [0003] The RTR control system collects the data of the previous batches of products completed by the lithography machine, and obtains the correction value of the lithography parameter of the lithography machine (the correction value of the yellow light parameter of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 许宗能蔡建祥周玮杨兆宇
Owner CSMC TECH FAB2 CO LTD
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