Manufacturing method of semiconductor structure

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as etching difficulties and dummy gate occupation, so as to reduce etching difficulty, ensure stability, and facilitate etching effect of time

Inactive Publication Date: 2013-05-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the gate length is very short, the grain width may be equivalent to the gate length, and the dummy gate may be occupied by the entire grain. If the crystal plane {111} in the polysilicon dummy gate faces upward, etching difficulties will occur.

Method used

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  • Manufacturing method of semiconductor structure
  • Manufacturing method of semiconductor structure
  • Manufacturing method of semiconductor structure

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Embodiment Construction

[0017] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0018] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0019] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not int...

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Abstract

The invention provides a manufacturing method of a semiconductor structure. The manufacturing method includes that (a) substrates (100) are provided; (b) false grid stacking is formed above the substrates (100), wherein the false grid stacking comprises a grid electrode medium layer (203) and a false grid (201) which is arranged above the grid electrode medium layer (203), and the false grid (201) is made of non-crystalline silicon materials; (c) ion implantation is conducted on exposure areas of the substrates (100) on two sides of the false grid (201), so that a source / leaking area (110) is formed; (d) an interlayer medium layer (400) which covers the source / leaking area (110) and the false grid stacking is formed; (e) a part of the interlayer medium layer (400) is removed so as to expose the false grid (201), and the false grid (201) is removed; (f) source and leaking implantation craft is executed. A traditional process of replacing grid craft is changed by the manufacturing method of the semiconductor structure, so that corrosion time is easy to control, corrosion difficult is reduced, and stability of corrosion craft is guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor structure. Background technique [0002] In the existing replacement gate process, the steps are: firstly form a dummy gate and sidewalls surrounding the dummy gate - perform ion implantation on the substrate to form source / drain regions - perform annealing treatment on the substrate - Etching and removing the dummy gate. Among them, the material of the dummy gate is usually amorphous silicon, and the annealing temperature is about 1050 degrees Celsius. When the substrate is annealed, the amorphous silicon forming the dummy gate is at least partially transformed into polysilicon, and the crystal plane orientation of the polysilicon grains is uncertain. This will cause difficulties in etch control during subsequent etching and removal of the dummy gate, for example, using TMAH to etch the polysilicon dummy gate. [0003] Spec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28
CPCH01L21/265H01L21/28H01L29/66575H01L29/66545H01L29/78
Inventor 尹海洲于伟泽
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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