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A thz-band emxt cavity filter based on mems technology

A cavity filter and filter technology, which is applied to waveguide devices, electrical components, circuits, etc., can solve the problems of large insertion loss and difficult processing of waveguide or cavity filters

Inactive Publication Date: 2015-09-02
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the above-mentioned defects, the present invention solves the problems of large insertion loss and difficult manufacturing of terahertz band filters, especially waveguide or cavity filters, and provides a compact, mass-produced, Easy to integrate, low cost, small size, based on MEMS technology THz band Electromagnetic Crystals (EMXT for short) cavity filter

Method used

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  • A thz-band emxt cavity filter based on mems technology
  • A thz-band emxt cavity filter based on mems technology
  • A thz-band emxt cavity filter based on mems technology

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Embodiment

[0025] Such as figure 1 As shown, the THz-band EMXT cavity filter based on the MEMS process includes an upper silicon wafer 1, a lower silicon wafer 2 and a main body 6; the upper silicon wafer 1 is etched with a positioning groove 7 and a Braille mark 8; as figure 2 As shown, the main part 6 includes a PBG structure and a waveguide cavity 4, the PBG structure is composed of silicon pillars 5, and air is filled between the silicon pillars 5; the PBG structure is located in the cavity of the waveguide cavity 4; the surface of the silicon pillar 5 A gold layer is sputtered, and the thickness of the gold layer is 200nm;

[0026] Such as figure 2 As shown, line defects and point defects are introduced into the PBG structure, line defects form PBG waveguides 9 and 10, which are located on the left and right sides of the waveguide cavity 4, and multiple point defects form three resonant cavity structures 3 in the middle;

[0027] The filter can be connected with WR1.9 (483μm×241...

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Abstract

The invention relates to a THz band EMXT cavity filter based on a micro-electromechanical system (MEMS) technique and is applied to terahertz band, and belongs to the technical field of terahertz. The THz band EMXT cavity filter based on the MEMS technique comprises an upper layer silicon wafer, a lower layer silicon wafer and a main portion. The upper layer silicon wafer is provided with a positioning groove and a braille mark. The main portion comprises a waveguide cavity and a photonic band gap (PBG) structure which is formed by silicon pillars and filled with air among the silicon pillars and arranged inside the waveguide cavity. Surfaces of the silicon pillars are sputtered with a golden layer. Line defects and point defects are introduced into the PBG structure. The line defects form the PBG waveguides which are arranged at the left side and the right side of the cavity body of the waveguide cavity. The point defects form three middle resonant cavity structures. The filter uses the upper layer silicon wafer and the lower layer silicon wafer to process.

Description

technical field [0001] The invention relates to an EMXT cavity filter in the THz band based on MEMS technology, which is suitable for the THz band and belongs to the technical field of the Terahertz. Background technique [0002] In recent years, terahertz technology has developed faster and faster, and its applications have become wider and wider. Terahertz waves are between microwave and infrared in the frequency band, and belong to the intersection area of ​​electronics and photonics. Terahertz waves have unique properties such as transientity, coherence, wide bandwidth, low photon energy, and strong penetration to non-metallic and non-polar materials. Therefore, they have broad application prospects in imaging, detection, communication, and radio astronomy. . However, the field of terahertz waves still lacks low-cost high-performance devices such as filters and amplifiers. Among them, filters are key components in radar, communication and imaging systems, and the desi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/208
Inventor 刘埇司黎明周凯崔萌萌郑超卢宏达朱思衡
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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