Modularized structure of three-level converter

A three-level, converter technology, applied in the direction of converting AC power input to DC power output, electrical components, output power conversion devices, etc., can solve problems such as damage and excessive stray inductance of the commutation circuit, and achieve The effect of ensuring stable operation, improving heat dissipation, and reducing the possibility of damage

Inactive Publication Date: 2013-05-15
SHANGHAI ELECTRICGROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] IGBT (Insulated Gate Bipolar Transistor) is a voltage-sensitive device. If the stray inductance in the commutation circuit is too large, it may cause overvoltage and damage when the IGBT is turned off.

Method used

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  • Modularized structure of three-level converter
  • Modularized structure of three-level converter
  • Modularized structure of three-level converter

Examples

Experimental program
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no. 1 Embodiment

[0051] see figure 2 , is the first specific embodiment of the present invention, wherein the first IGBT S1 is located at the upper right corner of the water-cooled substrate 1; the second IGBT S2 is located at the lower right corner of the water-cooled substrate 1; the third IGBT S3 is located at the lower left corner of the water-cooled substrate 1; The four IGBTs S4 are located in the upper left corner of the water-cooled substrate 1; the first clamping diode D1 is located below the middle of the water-cooled substrate 1; the second clamping diode D2 is located above the middle of the water-cooled substrate 1; therefore, the vertical cooling channel 104 on the left is used The vertical cooling channel 105 in the middle is used for cooling the first and second clamping diodes D1 and D2; the vertical cooling channel 106 on the right is used for cooling the first and second IGBT S1, S2, and the cooling water first flows through the bottom of the first and fourth IGBT S1, S4, a...

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Abstract

The invention discloses a modularized structure of a three-level converter. The three-level converter comprises three single-phase three-level circuits which are linked in parallel. Each single-phase three-level circuit comprises a first insulated gate bipolar transistor (IGBT), a second IGBT, a third IGBT, a fourth IGBT, a first clamping diode and a second clamping diode, wherein the first IGBT, the second IGBT, the third IGBT and the fourth IGBT are fixed on the surface of a water-cooling substrate with a water channel inside. Connection wires of the level circuits are simple through reasonable and symmetric layout and current circuits are reduced to the outmost so that stray inductance of a high-frequency circuit is little in exchanging currents and voltage impact is reduced when the IGBTs are cut off. Meanwhile, the modularized structure of the three-level converter fully takes heat difference of IGBTs of the three-level converters and convenience of water channel design into consideration and a radiating effect of a system is stable.

Description

technical field [0001] The invention relates to a power device, in particular to a modular structure of a three-level converter. Background technique [0002] With the development and progress of power electronics technology, the power of converters is getting higher and higher. In order to improve the efficiency of the whole system and reduce the heat loss of the system, the high-power converter system tends to adopt the voltage level of medium and high voltage. In view of the current development level of power electronic devices, if the two-level topology continues to be used, multiple power electronic devices need to be connected in series in medium and high voltage applications, and it is difficult to solve the static and dynamic voltage equalization problems of series connected power electronic devices. Thereby reducing the reliability of the whole system. Due to the use of clamping diodes, the three-level topology successfully solves the problem of voltage equalizati...

Claims

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Application Information

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IPC IPC(8): H02M7/483H02M7/00H05K7/20
Inventor 张鲁华吴竞之薛兆强宋小亮尹正兵陈国栋董祖毅
Owner SHANGHAI ELECTRICGROUP CORP
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