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Embedded-type internal memory with system restoration data and system restoration method thereof

A technology for repairing data and repairing methods, which is applied in the fields of electrical digital data processing, generation of response errors, and fault handling not based on redundancy, and can solve problems such as failure to boot

Inactive Publication Date: 2013-05-29
SILICON MOTION INC (CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In view of this, how to effectively ensure the safety of the system internal code (In-System Programming Code, ISP Code) in the embedded memory damaged during the tin furnace soldering process, so as to overcome the shortcoming that the handheld electronic device cannot be turned on, is really an industry need. Important Issues to be Solved

Method used

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  • Embedded-type internal memory with system restoration data and system restoration method thereof
  • Embedded-type internal memory with system restoration data and system restoration method thereof
  • Embedded-type internal memory with system restoration data and system restoration method thereof

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Embodiment Construction

[0035] Embodiments of the present invention will be described below in conjunction with related figures. In the drawings, the same reference numerals indicate the same or similar components or process steps.

[0036] Certain terms are used in the specification and subsequent claims to refer to particular components. It should be understood by those skilled in the art that the same component may be called by different names. This description and subsequent patent applications do not use the difference in name as a way to distinguish components, but use the difference in function of components as a basis for differentiation. The "comprising" mentioned throughout the specification and subsequent claims is an open-ended term, so it should be interpreted as "including but not limited to...". In addition, the term "coupled" herein includes any direct and indirect means of connection. Therefore, if it is described that a first device is coupled to a second device, it means that th...

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Abstract

The invention discloses embedded-type internal memory with system restoration data. The internal memory comprises a flash memory unit, a storage unit and a control unit. A group of in-system codes (In-System Code, ISP Code) are stored in the flash memory unit, a group of system restoration codes are stored in the storage unit and are used for rebuilding the in-system codes, and the control unit is in electric connection with the flash memory unit and the storage unit and used for judging whether the in-system codes are damaged. When the in-system codes are damaged, the control unit enables the system restoration codes to rebuild the in-system codes. The invention discloses a system restoration method of the embedded-type internal memory, and the method includes confirming that the in-system codes in the flash memory unit are damaged, reading the system restoration codes in the storage unit, and rebuilding the in-system codes through the system restoration codes.

Description

【Technical field】 [0001] The invention relates to flash memory technology, especially a technology for embedded memory and its control method. 【Background technique】 [0002] Flash memory (Flash Memory) is a kind of non-volatile memory. It uses a floating gate (Floating Gate) transistor to control the amount of charge flowing in to store data, and it does not require additional power to maintain data storage. In other words, when the external power is cut off, the data stored in the flash memory will not disappear. [0003] Flash memory can be divided into NOR Flash and NAND Flash. Generally speaking, the former is often used to store program codes, and the latter is often used to store data. If it is distinguished by the amount of data that each transistor unit (Cell) can store, NAND Flash can be divided into two categories: Single Level Cell (SLC) architecture and Multi Level Cell (MLC) architecture. [0004] For a traditional flash memory architecture, reference may b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/28
CPCG06F11/0793G06F11/28
Inventor 李双
Owner SILICON MOTION INC (CN)
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