Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of thin-layer graphene oxide material

A technology of graphene and graphene microchips, which is applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve the problems of difficult operation, long time consumption, and harsh preparation conditions, and achieve low cost, high yield, and reaction The effect of low temperature

Active Publication Date: 2015-04-29
苏州格瑞丰纳米科技有限公司
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can prepare a large amount of graphene at a relatively low cost, it is also limited by disadvantages such as harsh preparation conditions, long time consumption, and difficult operation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of thin-layer graphene oxide material
  • Preparation method of thin-layer graphene oxide material
  • Preparation method of thin-layer graphene oxide material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) Preparation of graphene oxide

[0035] Take 0.2g of graphene microflakes and 10mL of concentrated sulfuric acid and mix uniformly at room temperature, then slowly add 0.6g of potassium permanganate in a room temperature water bath, then stir and react at room temperature for 2h, then add 5% HCl to remove unreacted Potassium permanganate, then washed to neutral with distilled water to obtain viscous graphene oxide, numbered K-3;

[0036] (2) Preparation of graphene oxide dispersion

[0037] Use a straw to absorb 1 mL of viscous graphene oxide, add it to 10 mL of distilled water or lye (pH=9), and sonicate at 500 W for 30 min to obtain a uniform and stable dispersion.

Embodiment 2

[0039] (1) Preparation of graphene oxide

[0040] Take 0.2g of graphene microflakes and 10mL of concentrated sulfuric acid and mix uniformly at room temperature, then slowly add 0.4g of potassium permanganate in a water bath at room temperature, then stir and react at room temperature for 2h, then add 5% HCl to remove unreacted Potassium permanganate, then washed to neutral with distilled water to obtain viscous graphene oxide, numbered K-2;

[0041] (2) Preparation of graphene oxide dispersion

[0042] Use a straw to absorb 1 mL of viscous graphene oxide, add it to 10 mL of distilled water or lye (pH=9), and sonicate at 500 W for 30 min to obtain a uniform and stable dispersion.

Embodiment 3

[0044] (1) Preparation of graphene oxide

[0045] Take 0.2g of graphene microflakes and 10mL of concentrated sulfuric acid and mix uniformly at room temperature, then slowly add 0.3g of potassium permanganate in a water bath at room temperature, then stir and react at room temperature for 2h, then add 5% HCl to remove unreacted Potassium permanganate, then washed to neutral with distilled water to obtain viscous graphene oxide, numbered K-1.5;

[0046] (2) Preparation of graphene oxide dispersion

[0047] Use a straw to absorb 1 mL of viscous graphene oxide, add it to 10 mL of distilled water or lye (pH=9), and sonicate at 500 W for 30 min to obtain a uniform and stable dispersion.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a thin-layer graphene oxide material. As preferable one of embodiments, the preparation method of the thin-layer graphene oxide material comprises the following steps of: sufficiently mixing graphene microchip, acid solvent and oxidant uniformly for reacting under a set temperature; and washing the mixture to be neutral and untrasonically treating the mixture to obtain the thin-layer graphene oxide material. A reducing agent is added to the thin-layer graphene oxide to carry out the reducing reaction to produce the reduced thin-layer graphene oxide material. Furthermore, the obtained thin-layer graphene oxide and the reduced thin-layer graphene oxide are dispersed in a solvent to obtain thin-layer graphene oxide dispersion liquid and reduced thin-layer graphene oxide dispersion liquid. The preparation method disclosed by the invention is simple in process, simple in needed equipment, safe and simple to operate, low in cost, strong in controllability, easy to realize large-scale industrial production, and capable of expanding the different application needs of the graphene oxide.

Description

technical field [0001] The invention relates to a preparation method of a graphene material, in particular to a preparation method of a thin-layer graphene oxide material. Background technique [0002] Graphene is a new type of carbon material with a two-dimensional honeycomb lattice structure formed by a single layer of carbon atoms tightly packed, and is the basic structural unit of fullerenes, carbon nanotubes, and graphite. Due to its unique mechanical, quantum and electrical properties, it has become the most active research frontier in the field of materials science. [0003] At present, the preparation methods of graphene mainly include mechanical exfoliation method, epitaxial crystal growth, chemical vapor deposition method, chemical redox method and so on. Most of the chemical redox methods use bulk graphite of different sizes as raw materials. Although this method can produce a large amount of graphene at a relatively low cost, it is also limited by unfavorable f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04C01B32/198
Inventor 刘立伟陈明亮郭玉芬李伟伟魏相飞邱胜强廖书田龚佑品龙明生
Owner 苏州格瑞丰纳米科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com