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A monitoring method for ion implantation process

A technology of ion implantation and process, applied in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as large impact on results and fluctuations, and achieve reduced monitoring costs, stability and reliability Guaranteed performance and guaranteed fluency

Active Publication Date: 2015-11-25
CSMC TECH FAB2 CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this monitoring method, the substrate resistance of barewafer (generally, Ptypewafer: 5~25ohm / cm) fluctuates greatly, which has a great influence on the final result
In the actual monitoring process, when using the same implantation conditions (same implanter and the same implantation menu) and the same annealing conditions (same RTP machine and the same annealing menu) and the same measurement conditions, the barewafer of different substrate resistances is measured The final result will be quite different, and the probability of over-control and over-limit (OOC / OOS) is high

Method used

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  • A monitoring method for ion implantation process

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Embodiment Construction

[0026] As mentioned in the background technology, the existing monitoring method of the ion implantation process directly uses the bare crystal as the sample for monitoring, and the substrate resistance of the bare crystal itself is extremely unstable, which is prone to the following problems:

[0027] 1. The uncertainty of the results in the monitoring process is increased, which has an impact on the process personnel to ensure the online ion implantation status;

[0028] 2. RsOOC / OOS often occurs due to abnormal substrate resistance. When the wafer is replaced and re-monitored, the result is ok; this not only wastes the wafer used for monitoring, increases the cost of the ion implantation monitoring process, but also increases the time of the process , reducing production efficiency;

[0029] 3. The wafers used for monitoring cannot be reused, which greatly increases the cost of monitoring.

[0030] Therefore, the present invention proposes a monitoring method for ion impla...

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Abstract

The invention discloses a monitoring method for ion implantation technology. The monitoring method comprises the steps of manufacturing an epitaxial layer on a bare wafer, monitoring the ion implantation technology through a characteristic that resistance of the epitaxial layer is stable, and therefore obtaining an implantation state on the bare wafer of the ion implantation technology. Accuracy and stability of monitoring results are ensured, fluency of processing of semiconductors is ensured, and monitoring cost is saved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, in particular to a method for monitoring the state of the ion implantation process on a wafer after the ion implantation process. Background technique [0002] In the integrated circuit manufacturing process, different types of semiconductor regions can be formed on the silicon substrate through doping to form various device structures. Ion implantation is a doping technology that bombards the surface of the silicon wafer with high-energy ions. At the doping window, impurity ions are implanted into the silicon body. In other parts, the impurity ions are shielded by the protective layer on the silicon surface to complete selective doping. process. [0003] In the ion implantation process, in order to judge whether the ion implantation energy and implantation dose meet the specification requirements, a crystal garden for monitoring is required, which can be monitored on different equipme...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L21/265
Inventor 阳厚国张伟
Owner CSMC TECH FAB2 CO LTD