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SRAM (Static Random Access Memory) single event latch-up effect testing system and method

A testing system and single-particle technology, applied in instruments, static memory, etc., can solve the problems of obtaining single-particle inverted cross-section, filling data loss, long experiment period, etc., to improve measurement accuracy and efficiency, avoid loss, and reduce experiments. effect of cycles

Inactive Publication Date: 2013-06-19
NORTHWEST INST OF NUCLEAR TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for SRAM devices, the power-off will cause the internal filling data to be lost, making it impossible to accurately obtain the single-event flipping cross-section while obtaining the single-event blocking cross-section
If two parameters can be obtained accurately, repeated experiments must be repeated many times, which makes the experiment cycle long and difficult to adapt to the current situation of domestic single event effect experimental equipment and machine time constraints.

Method used

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  • SRAM (Static Random Access Memory) single event latch-up effect testing system and method
  • SRAM (Static Random Access Memory) single event latch-up effect testing system and method
  • SRAM (Static Random Access Memory) single event latch-up effect testing system and method

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Embodiment Construction

[0029] According to the requirements of the present invention, the following electronic components can be selected to build the test circuit board of the system.

[0030] The lower controller can choose commonly used 8-bit single-chip microcomputer, such as AT89S51, AT89S52 and so on. In the circuit design of this part, the operating frequency of the controller should be increased as much as possible to facilitate the detection and processing of the power supply current data. The communication between the lower controller and the upper computer can use the serial communication protocol RS232 or RS422.

[0031] The current test circuit can choose the 16-bit analog-to-digital conversion circuit AD1168. The conversion frequency of this chip can reach 200kHz. It has built-in reference, SPI interface, 8 analog output channels and channel conversion switches. It can easily and quickly establish an accurate and Quickly simulate voltages to test circuits. However, it should be noted...

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Abstract

The invention relates to an SRAM (Static Random Access Memory) single even latch-up effect testing system and method. The SRAM single event latch-up effect testing system comprises a host computer, a secondary controller, an SEU (Single Event Upset) testing circuit, a current testing circuit, a latch-up protection circuit and a power supply module. The SRAM single-particle latch-up effect testing system and method have the advantages of being capable of acquiring a single event upset cross section and a latch-up cross section simultaneously, shortening an experimental period, saving experiment costs, and enabling the measurement to be more accurate and efficient.

Description

technical field [0001] The invention relates to an asynchronous random access memory (SRAM) device testing system and method, in particular to a SRAM device single-event latch-up effect testing system and method. Background technique [0002] In space satellite control systems, SRAM devices have been widely used as important data storage media, but protons and heavy particles in space will cause SRAM devices to produce single-event flipping and single-event locking effects, which makes the control system disorder and becomes an impact. The main factor of spacecraft life and reliability. Therefore, carrying out the ground simulation of the single event effect of satellite SRAM devices and obtaining the single event flipping cross section and blocking cross section of SRAM devices has become the main work to evaluate the single event resistance ability of SRAM devices. [0003] SEL (Single Event Latch, SEL) is a low-impedance, high-current phenomenon that occurs in PNPN semic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/08
Inventor 姚志斌张凤祁郭红霞何宝平罗尹虹赵雯丁李利王艳萍肖尧王园明张科营王伟
Owner NORTHWEST INST OF NUCLEAR TECH