Gas diffusion homogenization device and plasma process equipment using same

Abstract

The invention provides a device for improving the diffusion homogeneity of gas in a vacuum chamber. The device comprises one or more stacked diffusion parts with a plurality of gas through holes, wherein the diffusion parts are matched with the corresponding cross sections of the spaces of the vacuum chamber in shape and size, so that the vacuum chamber is divided into two spaces by the diffusion parts, and a gas lead-in hole and a vacuum orifice are formed in the two spaces respectively. The invention further provides plasma process equipment provided with the gas diffusion homogenization device; the gas diffusion homogenization device is mounted in a space between the inner wall in the vacuum chamber and the lower bottom surface of a lower electrode; a gas lead-in device and the vacuum orifice are formed in the two spaces respectively; and the upper end surface of the lower electrode and the gas lead-in device are positioned in the same space. The diffusion homogeneity of the gas in the vacuum chamber is effectively improved in a simple way of configuring the diffusion parts, so that the plasma process homogeneity is remarkably improved. Compared with the conventional technical solution, the mechanisms involved in the invention are easy to realize, the machining and mounting operations are simple and reliable, and the cost is also remarkably reduced.

Description

technical field [0001] The invention relates to a gas diffusion uniform device, in particular to a device for improving the gas diffusion uniformity in a vacuum chamber. The invention also provides plasma processing equipment provided with the gas diffusion homogenization device. Background technique [0002] Many manufacturing processes of semiconductor integrated circuit chips, LED chips and other microelectronic chips use the process steps of film growth or etching in a vacuum environment. The thin film growth process is to grow new thin film materials on the surface of the substrate. The commonly seen types of processes include plasma enhanced chemical vapor deposition (PECVD), metal organic chemical vapor deposition (MOCVD) and physical vapor deposition (PVD), etc. . The etching process is to selectively form volatile reactants from the surface of the substrate to remove materials. The commonly seen process types are inductively coupled plasma (ICP) etching process an...

AI Technical Summary

Problems solved by technology

First, it increases the difficulty and cost of machining and assembly of the vacuum chamber

Secondly, if a single vacuum pump is used, how to connect the four vacuum ports on the chamber with the single air inlet on the vacuum pump becomes another difficult and costly technical problem, because these four connecting pipes must Together, and the geometric position needs to be symmetrical; if multiple vacuum pumps are used, the cost will increase significantly, and the pumping speed of each vacuum pump needs to match

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